Study on Electrostatic Discharge Stress Reliability of Thin-Film Transistors With Various Interface and Structure Types

Chen, Zhengyu; Zhang, Meng; Yan, Yan; Xue, Shuangmei; Lan, Wenrui; He, Siyuan; Huang, Yuxiang; Zhou, Ye; Kwok, Hoi-Sing

doi:10.1109/ted.2024.3442779

IEEE Trans. Electron Devices

2024

DOI: 10.1109/ted.2024.3442779

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Study on Electrostatic Discharge Stress Reliability of Thin-Film Transistors With Various Interface and Structure Types

Zhengyu Chen,

Meng Zhang,

Yan Yan

et al.

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Exploration of a Novel Electric-Fuse Device with a Simple Structure of Ni Metal on a SiO2 Dielectric for Electrostatic Discharge Protection under a Human Body Model

Guan,

Li,

Chen

et al. 2024

Micromachines

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On-chip electrostatic discharge (ESD) protection poses a challenge in the chip fabrication process. In this study, a novel electric fuse (E-fuse) device featuring a simple structure of Ni metal on a SiO2 dielectric for ESD protection was proposed, and the physical mechanism of its operation was investigated in detail. Experimental evaluations, utilizing transmission line pulse (TLP) testing and fusing performance analyses, reveal that the E-fuse, constructed with a Ni metal layer measuring 5 μm in width, 100 μm in length, and 5 nm in thickness, achieved a significant ESD protection voltage of 251 V (VHBM) and demonstrates low-voltage fusing at a bias voltage of 7 V. Compared to traditional ESD protection devices, the E-fuse boasts a smaller size and removability. To assess fusing performance, devices of varying sizes were tested using a fusing lifetime model. This study supports both theoretical and empirical evidence, enabling the adoption of cost-effective, straightforward E-fuse devices for ESD protection.

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Exploration of a Novel Electric-Fuse Device with a Simple Structure of Ni Metal on a SiO2 Dielectric for Electrostatic Discharge Protection under a Human Body Model

Guan,

Li,

Chen

et al. 2024

Micromachines

View full text Add to dashboard Cite

show abstract

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Study on Electrostatic Discharge Stress Reliability of Thin-Film Transistors With Various Interface and Structure Types

Cited by 1 publication

References 44 publications

Exploration of a Novel Electric-Fuse Device with a Simple Structure of Ni Metal on a SiO2 Dielectric for Electrostatic Discharge Protection under a Human Body Model

Exploration of a Novel Electric-Fuse Device with a Simple Structure of Ni Metal on a SiO2 Dielectric for Electrostatic Discharge Protection under a Human Body Model

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