Study on dynamics of surface structure by rapid and time‐resolved X‐ray photoelectron diffraction

Abstract

It took several hours to obtain one X-ray photoelectron diffraction (XPED) pattern because XPED measurement requires repeated acquisition of XPS as a function of emission angle. The measurement time using our previous XPED system was too long to clarify the dynamics of epitaxial growth and catalytic reaction. In the present study, in order to minimize the measurement time, we improved the software used to control the XPED system. Then, by using the improved system, we obtained information on the structural changes during the heating process of an ion-bombarded silicon surface.