Study on Deep Level Traps in P-Hgcdte With Dltfs

Abstract

We studied the characteristics of deep-level traps in p-type HgCdTe diodes using the Deep Level Transient Fourier Spectroscopy (DLTFS) method. For both holes and electrons, two types of traps were observed. The DLTFS signal intensity of one type of trap increased with the carrier density in the HgCdTe, while the other did not exhibit a monotonic increase. While measuring the stability of these traps during cooling cycles, the DLTFS signal intensity of the first group was almost constant while that of the latter fluctuated with every cooling cycle. Stable traps originated from Hg vacancies, unstable traps are attributed to vacancy-impurity complex defects.