Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures

Abstract

Articles you may be interested inApplication of InGaAs/GaAs superlattice-base structure for InGaP/GaAs superlattice-emitter bipolar transistor Appl. Phys. Lett. 96, 063505 (2010); 10.1063/1.3302462 Breakdown characteristics of InP/InGaAs composite-collector double heterojunction bipolar transistor Effect of composite collector design on the breakdown behavior of InGaP/GaAs double heterojunction bipolar transistorThe dc performances of an interesting InP/InGaAs tunneling-emitter bipolar transistor ͑TEBT͒ with double heterostructures are studied and demonstrated. The studied device has a higher breakdown voltage than conventional InP single heterojunction bipolar transistors between the collector and base. The base-collector junction breakdown voltage V BR up to 15.6 V is obtained. Both of the common-emitter and common-base breakdown voltages of the studied device are higher than 10 V. Furthermore, low variations of dc current gains are found as the temperature is increased from 25 to 175°C. The elimination of knee-shaped characteristics and near unity ideality factors of collector and base currents ( C and B ) are obtained due to the use of a ␦-doping sheet and spacer layer. In addition, the studied TEBT device has a stable dc current gain distributed regime as the temperature is increased from 25 to 175°C.

Comparative studies of InP/InGaAs single and double heterojunction bipolar transistors with a tunnelling emitter barrier structure

“…This device structure uses a thin tunnelling barrier in place of the wide band gap emitter. The tunnelling barrier inserted between the base and emitter layer acts as an effective mass filter for electrons and holes [3][4][5][6]. The emitter injection efficiency is then improved based on the very large difference of tunnelling probability between electron and hole in the tunnelling barrier layer [7].…”