Study on chemical solution deposition of aluminum-doped zinc oxide films

Li, Gang; Zhu, Xuebin; Lei, Hechang; Song, Wenhai; Yang, Zhaorong; Dai, Jianming; Sun, Yan; Pan, Xu; Dai, Songyuan

doi:10.1016/j.jallcom.2010.06.083

Cited by 15 publications

(5 citation statements)

References 36 publications

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“…A similar result was also reported by others (Li et al, 2010). Moroever, the increase in the annealing temperatures causes the atoms to receive a more diffuse activation energy and then to migrate into the energetically favorable site in the crystal lattice.…”

Section: Discussionsupporting

confidence: 88%

“…It could be attributed to the formation of new nucleating centers due to the doping atoms (Oztas and Bedir, 2008). The preferential orientation of the (002) plane is related to the minimization of the surface energy while the subsequent decrease of the (002) peak relative intensity for higher doping concentration can be affected by the saturation of newer nucleating centers (Li et al, 2010;. The trend of decrease in relative intensity of (002) peak with increasing in doping content is similar to the study of previous work (Caglar, 2013).…”

Section: Discussionmentioning

confidence: 99%

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Influence of Annealing Temperature on Characteristics of Bismuth Doped Zinc Oxide Films

Rattanachan¹

2013

American Journal of Applied Sciences

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In this study, Bismuth (Bi) doped ZnO thin films were deposited on quartz substrates by a sol-gel spin coating method and annealed at different annealing temperatures of 200, 300, 400, 500, 600 and 700°C, respectively. Structural and optical properties of nanocrystalline Bi-doped ZnO film on quartz were investigated by using X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM) and UV-VIS spectrophotometer. The high annealing temperature of 700°C as a critical temperature causes the crystallographic reorientation plane in ZnO:Bi nanostructure mostly due to the initial formation of the polycrystalline phase with the inter-grain segregation of Bi dopant atoms. Bi-incorporating ZnO films with an increase in annealing temperature resulted in a blue wavelength shift of the photon absorption edge. The optical band gap of the films was increased from 3.27 eV to 3.34 eV. By decreasing the annealing temperatures from 700 to 200°C, the grain size of Bi-doped ZnO decreased from 18 nm to 8 nm. The effect of the annealing temperature on the electrical conductivity had been considered. The low electrical conductivity of 0.9 (Ω.cm) −1 was obtained for ZnO:0.2 film annealed at 600°C with good nano-crystallization. However, the Bi-doped ZnO films prepared by cost-effective spin coating technique provided to have a very high photon absorption coefficient (10 4 -10 5 cm −1) and did not appreciably affect the optical transparency. ZnO films doped with 0.2% at. Bi can be used as a high resistive buffer layer for solar cell application.

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Section: Discussionsupporting

confidence: 88%

Section: Discussionmentioning

confidence: 99%

Influence of Annealing Temperature on Characteristics of Bismuth Doped Zinc Oxide Films

Rattanachan¹

2013

American Journal of Applied Sciences

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“…At low doping concentration, the increase in the (0 0 2) peak may be attributed to the formation of new nucleating centers due to dopant atoms resulting from the decrease of nucleation energy barrier [22]. The subsequent decrease of (0 0 2) peak intensity for higher doping concentration may be affected by the saturation of newer nucleating centers [22,23] and the segregation of amorphous cadmium components. Ohyama et al [24] studied the effect of aluminum content on the structure of ZnO:Al films, and thought the decrease of (0 0 2) peak could be due to the segregation of aluminum components at the grain boundary for the higher aluminum content, though no impurity phases were found from the XRD patterns [24].…”

Section: Resultsmentioning

confidence: 99%

Doping and annealing effects on ZnO:Cd thin films by sol–gel method

Zhu

Tang

et al. 2011

Journal of Alloys and Compounds

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101

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“…From this observation, it can be established that moderate doping of the Eu 3+ ions in the WO 3 lattice enhances their crystalline nature, while a high concentration of Eu 3+ ions decreases the crystalline behavior. The reason behind this reduction in crystallinity at a higher doping concentration can be understood from the following facts: (i) at a higher impurity concentration, the impurity atoms may segregate along the inter-particle boundary regions [ 22 ]; (ii) the addition of newer growth centers may become abstained at a higher impurity concentration [ 23 ]; (iii) the crystal reorientation effects become predominant at higher Eu 3+ concentrations [ 24 ]. These factors can considerably reduce the crystalline quality of WO 3 thin films with more Eu 3+ contents.…”

Section: Resultsmentioning

confidence: 99%

Tailoring the Emission Behavior of WO3 Thin Films by Eu3+ Ions for Light-Emitting Applications

et al. 2022

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The article reports the successful fabrication of Eu3+-doped WO3 thin films via the radio-frequency magnetron sputtering (RFMS) technique. To our knowledge, this is the first study showing the tunable visible emission (blue to bluish red) from a WO3:Eu3+ thin film system using RFMS. X-ray diffractograms revealed that the crystalline nature of these thin films increased upto 3 wt% of the Eu3+ concentration. The diffraction peaks in the crystalline films are matched well with the monoclinic crystalline phase of WO3, but for all the films’, micro-Raman spectra detected bands related to WO3 monoclinic phase. Vibrational and surface studies reveal the amorphous/semi-crystalline behavior of the 10 wt% Eu3+-doped sample. Valence state determination shows the trivalent state of Eu ions in doped films. In the 400–900 nm regions, the fabricated thin films show an average optical transparency of ~51–85%. Moreover, the band gap energy gradually reduces from 2.95 to 2.49 eV, with an enhancement of the Eu3+-doping content. The doped films, except the one at a higher doping concentration (10 wt%), show unique emissions of Eu3+ ions, besides the band edge emission of WO3. With an enhancement of the Eu3+ content, the concentration quenching process of the Eu3+ ions’ emission intensities is visible. The variation in CIE chromaticity coordinates suggest that the overall emission color can be altered from blue to bluish red by changing the Eu3+ ion concentration.

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Study on chemical solution deposition of aluminum-doped zinc oxide films

Cited by 15 publications

References 36 publications

Influence of Annealing Temperature on Characteristics of Bismuth Doped Zinc Oxide Films

Influence of Annealing Temperature on Characteristics of Bismuth Doped Zinc Oxide Films

Doping and annealing effects on ZnO:Cd thin films by sol–gel method

Tailoring the Emission Behavior of WO3 Thin Films by Eu3+ Ions for Light-Emitting Applications

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