“…However, although the Cr 2p 3/ 2 -Cr 2p 1/2 peaks were observed in slightly different places from those in the literature, the peak separations are consistent with the literature. [49][50][51] This confirms the hypothesis that the chromium ions are in the + 3 valence state in the ZnO lattice structure.…”
Undoped and Cr-doped zinc oxide (ZnO) thin films were deposited on the glass and p-Si substrates by the chemical spray pyrolysis technique. The films were characterized by x-ray diffractometry (XRD) and UV-visible spectrometry, and electrical characterization was achieved by using the films as an interfacial layer between the Au and p-Si. The XRD results confirmed the undoped and Cr-doped ZnO thin film crystalline structures. UV-visible spectra provided the transmittance plots and band gap energy values. I-V measurements were performed on the fabricated Au/ZnO/p-Si and Au/ZnO:Cr/p-Si devices to determine the effect of the ZnO interfacial layer on their performance. Various junction parameters, such as the ideality factor, barrier height, and series resistance, were calculated from the I-V measurements by various techniques, and have been discussed in detail. A 100-mW/cm 2 power intensity light was exposed on the Au/ZnO:Cr/p-Si device to see the photodiode behavior as well as to determine light sensitivity parameters such as photosensitivity and detectivity. The results highlight that the Au/ZnO:Cr/p-Si device can be thought of for optoelectronic applications.
“…However, although the Cr 2p 3/ 2 -Cr 2p 1/2 peaks were observed in slightly different places from those in the literature, the peak separations are consistent with the literature. [49][50][51] This confirms the hypothesis that the chromium ions are in the + 3 valence state in the ZnO lattice structure.…”
Undoped and Cr-doped zinc oxide (ZnO) thin films were deposited on the glass and p-Si substrates by the chemical spray pyrolysis technique. The films were characterized by x-ray diffractometry (XRD) and UV-visible spectrometry, and electrical characterization was achieved by using the films as an interfacial layer between the Au and p-Si. The XRD results confirmed the undoped and Cr-doped ZnO thin film crystalline structures. UV-visible spectra provided the transmittance plots and band gap energy values. I-V measurements were performed on the fabricated Au/ZnO/p-Si and Au/ZnO:Cr/p-Si devices to determine the effect of the ZnO interfacial layer on their performance. Various junction parameters, such as the ideality factor, barrier height, and series resistance, were calculated from the I-V measurements by various techniques, and have been discussed in detail. A 100-mW/cm 2 power intensity light was exposed on the Au/ZnO:Cr/p-Si device to see the photodiode behavior as well as to determine light sensitivity parameters such as photosensitivity and detectivity. The results highlight that the Au/ZnO:Cr/p-Si device can be thought of for optoelectronic applications.
“…6). Based on oxygen binding peaks O 1s spectra, Zn(OH)2 can be assigned to ~532 eV, while Zn-O bonding at ~531 eV is still dominant throughout all the samples (see also Table S2) [30,31].…”
“…the intensity of UV emission is quite similar in all samples, suggesting that the recombination of photogenerated carriers was not affected by the choice of the Zn source. Unlikely, the intensity of visible emission showed a strong dependence on the Zn source, the observed order was ZnNit > Zn_Ace > Zn_Sul.Usually, ZnO compound prepared via chemical routes exhibits a strongly emission in the visible region, related to the surface oxygen defects and also hydroxyl (OH) groups adsorbed on crystal surface [17,77,100,107]. These findings indicated that intense visible emission of Zn_Nit sample can be attributed to the related to a high concentration of surface defects, mainly oxygen vacancies, and the presence of OH groups previously identified by XPS analysis.…”
In this contribution, we present an experimental and theoretical investigation of the role of counter-ions in the crystal morphology, surface structure, and photocatalytic activity of hierarchical ZnO nanostructures. The effect of zinc precursor (nitrate, acetate and, sulfate) along the synthesis of ZnO nanostructures grown directly onto a substrate by means of a simple hydrothermal method was analyzed in detail. Scanning electron microscopy images showed a preferential growth of ZnO nanostructures along the caxis, with a slight reduction in the orientation depending on the choice of the Zn source. 2 Theoretical calculations based on Wulff theory allowed us a better understanding of the morphological changes and to directly relate the photocatalytic performance at the different exposed surfaces of the as-observed crystal shapes. Our results showed that photocatalytic activities in the discoloration of organic dyes became superior for hierarchical ZnO nanostructures obtained from zinc nitrate. This finding was explained by X-ray photoelectron and photoluminescence spectroscopies, which revealed that the presence of surface defects, as well as the attached counter-ions and the abundance of carboxylate groups and organic residuals on ZnO surfaces are determinant for enhanced photocatalytic performance.
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