Study of X-ray radiation damage in the AGIPD sensor for the European XFEL

Zhang, Jiaguo; Fretwurst, E.; Graafsma, H.; Klanner, R.; Kopsalis, I.; Schwandt, J.

doi:10.1088/1748-0221/9/05/c05022

Cited by 20 publications

(32 citation statements)

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“…A saturation of N ox and J sur f has been found between 100 kGy and 1 MGy and the saturation values are smaller than those from test structures produced by other vendors. From mini sensors, no breakdown has been found up to 900 V after irradiation and all electrical properties, in particular the leakage current and inter-pixel capacitance, are well within specifications [2].…”

mentioning

confidence: 60%

“…Ionization of the target material is a major consequence of the charged particle interactions. In semiconductors as Si and insulators as SiO 2 ionization results in production of non-equilibrium densities of electrons and holes. In general ionization related with the passage of single energetic particle through a solid, is a complex process where high energy secondary electrons are generated with various energies and momenta and produce further ionization.…”

Section: Interaction Of Radiation With Mattermentioning

confidence: 99%

“…Type (2) is a deeper donor-like trap in the bulk of the SiO 2 layer, and the electron may even be trapped at the physical defect site, for example the E center as the trapped hole [159]. The type (1) trap, where the electron is closer to the Si-SiO 2 interface, probably has a lower barrier to the electron injection and can communicate more rapidly with the Si than type (2). As result type (1) appears to be a more likely candidate for a border trap in irradiated MOS devices.…”

Section: Comparisonmentioning

confidence: 99%

“…1.1. A dynamic range of 0,1, ..., up to more than 10 4 photons per pulse, a frame rate of 4.5 MHz, and in particular a radiation tolerance of the senors for X-ray doses up to 1 GGy for 3 years of operation [2]. 1.…”

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confidence: 99%

“…Introduction sensor, Fig. 1.2, has been designed according to the optimized pixel and guard ring geometries and technological processes based on SYNOPSIS TCAD simulations [4,6,7] with radiation damage related parameters implemented [2,8]. The sensors have been produced by SINTEF [9].…”

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confidence: 99%

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Surface effects in segmented silicon sensors

Schwandt

Fretwurst

Garutti

et al. 2017

Nuclear Instruments and Methods in Physics Research Section A:

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PROF. DR. MICHAEL POTTHOFFii "Τὸν δὲ νοῦ καί ἐπιστήμης ἐραστὴν ἀνάγκη τὰς τῆς ἔμφρονος φύσεως αἰτίας πρώ-τας μεταδιώκειν." Πλάτωνος, Τίμαιος, Κεφ. 16 "The lover of reason and knowledge must first seek for the causes which belong to the rational order."Plato, Timaeus, Ch. 16 iii To my parents. . . iv AbstractSilicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO 2 layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO 2 and at the Si-SiO 2 interface.In this thesis the surface radiation damage of the Si-SiO 2 system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO 2 of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO 2 ) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO 2 interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface radiation damage of silicon sensors.

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mentioning

confidence: 60%

Section: Interaction Of Radiation With Mattermentioning

confidence: 99%

Section: Comparisonmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Surface effects in segmented silicon sensors

Schwandt

Fretwurst

Garutti

et al. 2017

Nuclear Instruments and Methods in Physics Research Section A:

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Megapixels @ Megahertz – The AGIPD high-speed cameras for the European XFEL

Allahgholi

Becker

Delfs

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

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The European XFEL is an extremely brilliant Free Electron Laser Source with a very demanding pulse structure: trains of 2700 X-Ray pulses are repeated at 10 Hz. The pulses inside the train are spaced by 220 ns and each one contains up to 10 12 photons of 12.4 keV, while being ≤ 100 fs in length. AGIPD, the Adaptive Gain Integrating Pixel Detector, is a hybrid pixel detector developed by DESY, PSI, and the Universities of Bonn and Hamburg to cope with these properties.It is a fast, low noise integrating detector, with single photon sensitivity (for E γ 6 keV) and a large dynamic range, up to 10 4 photons at 12.4 keV. This is achieved with a charge sensitive amplifier with 3 adaptively selected gains per pixel. 352 images can be recorded at up to 6.5 MHz and stored in the in-pixel analogue memory and read out between pulse trains. The core component of this detector is the AGIPD ASIC, which consists of 64 × 64 pixels of 200 µm × 200 µm. Control of the ASIC's image acquisition and analogue readout is via a command based interface. FPGA based electronic boards, controlling ASIC operation, image digitisation and 10 GE data transmission interface AGIPD detectors to DAQ and control systems.An AGIPD 1 Mpixel detector has been installed at the SPB 1 experimental station in August 2017, while a second one is currently commissioned for the MID 2 endstation. A larger (4 Mpixel) AGIPD detector and one to employ Hi-Z sensor material to efficiently register photons up to E γ ≈ 25 keV are currently under construction.

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