Abstract:For stacked multiple-channel-structure devices such as stacked nanowire FETs (stacked NWFETs), work-function variation induced (WFV-induced) threshold voltage (V T ) variation is quantitatively investigated using a three-dimensional technology computer aided design (TCAD) tool. In the stacked structure device, the more nanowires are stacked, the more the WFV-induced V T variation can be decreased. It is proposed that the ratio of average grain size to gate area (RGG) for stacked multiple channel structures can… Show more
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