Study of vertical Si/SiO2 interface using laser-assisted atom probe tomography and transmission electron microscopy

Lee, J.H.; Lee, B.H.; Kim, Y.T.; Kim, J.J.; Lee, S.Y.; Lee, K.P.; Park, C.G.

doi:10.1016/j.micron.2013.11.003

Cited by 26 publications

(21 citation statements)

References 25 publications

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“…34 ReaxFF accurately describes bond breaking and formation as well as the expansion of the Si crystal during the oxide formation process, in good agreement with both experimental and density functional theory (DFT) results. 11,[35][36][37] In this work, we use the force field parameters developed by Buehler et al 38 The details of the force field parameters used are provided in the supplementary material.…”

supporting

confidence: 73%

“…[23][24][25] There have been multiple studies on the role of preferential evaporation, evolving tip shape, trajectory aberrations, and the interaction of laser with the material on the reconstruction. [26][27][28][29][30][31][32][33][34] We follow a different approach here by studying the role of relative oxidation. As the APT experiments are performed under the same condition, the qualitative role of temperature on the oxidation mechanism is studied.…”

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confidence: 99%

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Integrated atomistic chemical imaging and reactive force field molecular dynamic simulations on silicon oxidation

Dumpala

Broderick

Khalilov

et al. 2015

Applied Physics Letters

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confidence: 73%

mentioning

confidence: 99%

Integrated atomistic chemical imaging and reactive force field molecular dynamic simulations on silicon oxidation

Dumpala

Broderick

Khalilov

et al. 2015

Applied Physics Letters

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“…This implies that the reconstructed data includes a typical artefact due to local magnification effects (LME) . Specifically, in the case of the Si and SiO 2 interface, it has been observed that Si atoms are evaporated before SiO 2 due to the low evaporation field of Si, and atoms surrounding Si NC are projected inward . This typically occurs at the precipitate interfaces over sub‐nm distances .…”

Section: Resultsmentioning

confidence: 99%

Atom probe tomography of size‐controlled phosphorus doped silicon nanocrystals

Nomoto

Hiller

Gutsch

et al. 2016

Physica Rapid Research Ltrs

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Doping of silicon nanocrystals is essential to control their electronic and optical properties. The incorporation of an impurity into a silicon nanovolume is a nontrivial task due to the self‐purification effect. Here, a systematic atom probe tomography study of the phosphorus distribution and incorporation in size‐controlled silicon nanocrystals embedded in silicon dioxide is presented. Qualitatively, it turns out that the phosphorus distribution in the system follows a universal, nanocrystal‐size independent trend: phosphorus‐enrichment at the interface with a substantial phosphorus‐incorporation in the silicon nanocrystal as small as 2 nm in diameter. This clearly contradicts strict self‐purification. These observations are explained by the bulk‐solubility and ‐segregation behaviour, kinetic effects related to the diffusion lengths, and nanoscale interface strain. The quantitative determination of the amount of phosphorus atoms per quantum dot enables a systematic understanding of phosphorus‐induced effects on optical and electronic properties of silicon nanovolumes.

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“…FinFET structures consist of doped Si fins with a low evaporation field and surrounding oxide/gate with a high evaporation field (Lee et al, 2014; Melkonyan et al, 2017). Such heterogeneity in the structure and composition may suffer from local magnification effects (Miller & Hetherington, 1991) and trajectory overlap (Vurpillot et al, 2000; Sha & Cerezo, 2005) during field evaporation and poses great challenges in APT data reconstruction and interpretation.…”

Section: Introductionmentioning

confidence: 99%

Atom Probe Tomography Characterization of Dopant Distributions in Si FinFET: Challenges and Solutions

Xue

et al. 2019

Microsc Microanal

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Atom probe tomography (APT) has emerged as an important tool in characterizing three-dimensional semiconductor devices. However, the complex structure and hybrid nature of a semiconductor device can pose serious challenges to the accurate measurement of dopants. In particular, local magnification and trajectory aberration observed when analyzing hybrid materials with different evaporation fields can cause severe distortions in reconstructed geometry and uncertainty in local chemistry measurement. To address these challenges, this study systematically investigates the effect of APT sampling directions on the measurement of n-type dopants P and As in an Si fin field-effect transistor (FinFET). We demonstrate that the APT samples made with their Z-axis perpendicular to the center axis of the fin are effective to minimize the negative effects that result from evaporation field differences between the Si fin and SiO2 on reconstruction and achieve improved measurement of dopant distributions. In addition, new insights have been gained regarding the distribution of ion-implanted P and As in the Si FinFET.

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Study of vertical Si/SiO2 interface using laser-assisted atom probe tomography and transmission electron microscopy

Cited by 26 publications

References 25 publications

Integrated atomistic chemical imaging and reactive force field molecular dynamic simulations on silicon oxidation

Integrated atomistic chemical imaging and reactive force field molecular dynamic simulations on silicon oxidation

Atom probe tomography of size‐controlled phosphorus doped silicon nanocrystals

Atom Probe Tomography Characterization of Dopant Distributions in Si FinFET: Challenges and Solutions

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