Study of Triangle-Shaped Defects on Nearly On-Axis 4H-SiC Substrates

Zhou, Ren Wei; Liu, Xue Chao; Guo, Hui; Kong, Hai Kuang; Shi, Er Wei

doi:10.4028/www.scientific.net/msf.858.225

Search citation statements

Order By: Relevance

Paper Sections

Select...

Results1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2019

2023

Publication Types

Select...

Article2

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

(1 citation statement)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The second type counts for 1.56% of the dead dies, and they were caused by substrate inherited micropipes. The triangular defect, as the third type, which is a well-known killer-defect that is mainly related to downfalls, TSDs in the substrate, or scratches at the sub/epi interface, 21,22 counts for another 1.56%. The impacts of the above defects on a device have been studied in detail, 21,24 and will not be addressed here.…”

Section: Resultsmentioning

confidence: 99%

Effects of defects in a 4H-SiC material on the breakdown behavior of a Schottky barrier diode

Zhang,

Lou,

Gong

et al. 2023

CrystEngComm

View full text Add to dashboard Cite

show abstract

Section: Resultsmentioning

confidence: 99%

Effects of defects in a 4H-SiC material on the breakdown behavior of a Schottky barrier diode

Zhang,

Lou,

Gong

et al. 2023

CrystEngComm

View full text Add to dashboard Cite

show abstract

Correlation between Stacking Faults in Epitaxial Layers of 4H-SiC and Defects in 4H-SiC Substrate

Guo¹,

Peng²,

Liu³

et al. 2019

Journal of Inorganic Materials

View full text Add to dashboard Cite

The morphology and causes of stacking faults (SF) in homoepitaxial layers of 4H-SiC were studied. According to characteristics of PL images and morphology images of 4H-SiC five kinds of SFs have been defined. In the PL images, the morphologies of SF I and SF II-V are trapezoidal and triangular, respectively. SF II lays inside the area of SF I. In the morphology images, SF I and IV are not seen, SF II-III are carrot shaped and SF V is triangular respectively. The results show that SF I is a kind of base plane SF which originates from the base plane dislocation (BPD) lines of the substrate, parallel to <1100> direction and moving along <1120> direction during epitaxial growing. SF II and most of SF III-IV originate from BPDs in substrate. One BPD converts into threading dislocation during epitaxial growing and propagates to the surface along <0001> direction, while other BPDs or partial dislocations originating from threading dislocation propagate in (0001) plane to form triangular base plane SFs. The rest of SF III-IV and SF V originate from threading edge dislocation or other defects in substrate. SF II-III display carrots morphology because a

show abstract

Study of Triangle-Shaped Defects on Nearly On-Axis 4H-SiC Substrates

Cited by 2 publications

References 7 publications

Effects of defects in a 4H-SiC material on the breakdown behavior of a Schottky barrier diode

Effects of defects in a 4H-SiC material on the breakdown behavior of a Schottky barrier diode

Correlation between Stacking Faults in Epitaxial Layers of 4H-SiC and Defects in 4H-SiC Substrate

Contact Info

Product

Resources

About