2008
DOI: 10.1016/j.tsf.2007.12.063
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Study of trap states in polyfluorene based devices by using TSC technique

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Cited by 7 publications
(9 citation statements)
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“…The floor-level DOS deep in the bandgap is estimated as 10 16 -10 17 cm −3 eV −1 . This value is in good agreement with values determined from the TSC technique on a polyfluorene-type material by Renaud et al [29].…”
Section: B Thin-film Dos Mapping Using Energy-resolved Electrochemicsupporting
confidence: 91%
See 1 more Smart Citation
“…The floor-level DOS deep in the bandgap is estimated as 10 16 -10 17 cm −3 eV −1 . This value is in good agreement with values determined from the TSC technique on a polyfluorene-type material by Renaud et al [29].…”
Section: B Thin-film Dos Mapping Using Energy-resolved Electrochemicsupporting
confidence: 91%
“…In order to correlate the distribution of sub-bandgap density of states (DOS) with its impact on charge transport, a variety of time-resolved, frequency-resolved, and temperaturedependent (opto)electrical probes has been used to extract information about the sub-bandgap DOS and its relation to charge transport. For instance, transient current measurements including time-of-flight (TOF) photocurrent may be interpreted in terms of the rate of charge-carrier release from trap states [2][3][4]26,27], thermally stimulated current (TSC) [28][29][30][31] or luminescence (TSL) [32,33] measurements analyzed in terms of thermal activation out of trap states, and frequency-domain methods [34][35][36][37][38][39][40] interpreted in terms of electrical perturbation of charge induced by a frequency-variable small-signal ac voltage superimposed on a dc bias, such that carrier motion as well as trapping and detrapping processes can be observed. However, these varying experimental methods generally expose devices to different measurement conditions (e.g., applied bias, device thickness, choice of contacts, use of background illumination or laser pulse), and data interpretation involves different theoretical approximations.…”
Section: Introductionmentioning
confidence: 99%
“…The device shows relatively low hysteresis with an I on /I off ratio of 10 1 (Figure 5) due to the intrinsic traps present in the polyfluorene itself. 41 3.5. Tunable Properties of PFONPN.…”
Section: Resultsmentioning
confidence: 99%
“…Considering that the TSC techniques are available for the investigation of traps in the OLED [3], the measurement procedure used in this study was as follow: from a thermodynamic equilibrium state at room temperature, a forward bias V H was applied to the device for a charging time of about 5 minutes. The sample was cooled to initial temperature T 0 by keeping this bias and then was short-circuited.…”
Section: Methodsmentioning
confidence: 99%
“…However, the electrically active defects resulting from the amorphous structure or/and impurities affect strongly the charge transport properties of polymer-based devices [3][4][5]. Trapped charge carriers take part no longer in the transport, the trapped charges also influence the electric field distribution and hence the charge transport [6,7].…”
Section: Introductionmentioning
confidence: 99%