Study of thin gate dielectric films using deep level transient spectroscopy

Investigation of interface trap states in TiN/Al2O3/p-Si capacitor by deep level transient spectroscopy

“…The ⌬E A was 0.27 eV, which is much smaller than the value expected for hole emission ͑Ͼ0.55 eV͒ in the DLTS measurement. 5 In addition, the peak temperature was very high from the viewpoint of the hole emission. These results could be explained from the following discussion.…”

“…The activation energies (⌬E A ) of the peaks were reported beyond 0.55 eV. 5 In these measurements, large peaks were also detected in the DLTS spectrum of a TiN/Al 2 O 3 /p-Si MOS capacitor. However, the ⌬E A of the large peaks was much less that 0.55 eV and was as small as 0.19 eV under a certain gate bias voltage.…”

Total Ionizing Dose Effects on CMOS Image Sensors with Deep-Trench Isolation

“…A variety of experimental methods have been developed to characterize the interface states, such as electron spin resonance [4], C-V [5],deep level transient spectroscopy(DLTS) [6], and tri-state charge pumping technique [7]. A widely accepted energy distribution of the Si/SiO2 interface states exhibits two distinct peaks in the silicon band-gap, which are related to silicon dangling bonds at or near the interface [8].…”