Study of Thick Gaseous Electron Multipliers Gain Stability and Some Influencing Factors

Zhou, X. K.; Liu, Qian; Shi, Chen; Huang, Wenqian; Wang, Binlong; Zhang, Yongdong; Ge, Dong-Sheng; Liu, Hongbang; Zheng, Y.; Xie, Y.; Dong, Yuxiang; Zhang, Qiang; Chang, Jie; Wang, Jing; Li, Min; Zhou, Yan

doi:10.1088/0256-307x/31/3/032901

Cited by 3 publications

(2 citation statements)

References 13 publications

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“…The resolution of the barometer is 2.5 kPa. The gain of the detector could alsob e affected by environmental factors such as temperature and humidity [17][18][19], so these were monitored by a sensor.…”

Section: Methodsmentioning

confidence: 99%

Study of a sealed high gas pressure THGEM detector and response of alpha particle spectra

Zhang¹,

Liu²,

Liu³

et al. 2017

Chinese Phys. C

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Abstract:A sealed high gas pressure detector working in pure argon is assembled. It consists of a 5 cm × 5 cm PCB THGEM (THick Gaseous Electron Multipliers). The detector structure and experimental setup are described. The performances under high pressure of 2 atm mainly consist in selecting optimal voltages for ionization region and induction region. The dependence of the shape of Alpha particle spectra measured with relative gas gain on gas pressure (1.3 ∼ 2.0 atm) has been studied. The 8 groups of relative gas gain versus working voltage of THGEM expressed by weighting filed E/P are normalized, being consistent with theory. The results show that the air tightness of the chamber is good measured by a sensitive barometer and checked with gas gain. The experimental results are compared with Monte Carlo simulation on energy deposition without gas gain involved.

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Section: Methodsmentioning

confidence: 99%

Study of a sealed high gas pressure THGEM detector and response of alpha particle spectra

Zhang¹,

Liu²,

Liu³

et al. 2017

Chinese Phys. C

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“…First, the behavior of ions originating from subsequent THGEM stages is considered. Here 𝐸 THGEM is set to 30 kV/cm, which is the stable working high voltage for THGEMs, [17] with a gain of about 1 × 10 4 , 𝐸 below varies from 1 kV/cm to 6 kV/cm, and 𝐸 top from 0.02 kV/cm to 6 kV/cm. The procedure is simulated by drifting ions 1 mm below the THGEM hole.…”

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confidence: 99%

Ion Transportation Study for Thick Gas Electron Multipliers

Wang¹,

Liu²,

Liu³

et al. 2014

Chinese Phys. Lett.

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Ion back flow(IBF) is defined as the ions that are generated during multiplication in a thick-gas-electron-multiplier (THGEM) detector flow along the electric field. In order to suppress the IBF effect, we study ion transportation for THGEMs with various high voltages and geometrical parameters. By measuring the currents of all the electrodes of the THGEMs, the effective gain and ion back flow ratio are calculated. The measurement and simulation results reveal that with a staggered triple THGEM configuration, ion back flow can be suppressed to 1% with a proper working high voltage. The gain of the staggered configuration is less than that of the aligned configuration by 5% under the same high voltage condition. The design and the results are presented.

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Laser test of the prototype of CEE time projection chamber

Huang

et al. 2018

NUCL SCI TECH

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Study of Thick Gaseous Electron Multipliers Gain Stability and Some Influencing Factors

Cited by 3 publications

References 13 publications

Study of a sealed high gas pressure THGEM detector and response of alpha particle spectra

Study of a sealed high gas pressure THGEM detector and response of alpha particle spectra

Ion Transportation Study for Thick Gas Electron Multipliers

Laser test of the prototype of CEE time projection chamber

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