Study of thermal annealing induced plasmonic bleaching in Ag:TiO2 nanocomposite thin films

Advantage of dual-confined plasmas over conventional and facing-target plasmas for improving transparent-conductive properties in Al doped ZnO thin films

“…Moreover, plasma induced substrate temperature is significantly lower than other reported intentional substrate heating in DC sputtering processes. Even, if we compare present process with atom beam co-sputtering, which is used for simultaneous deposition of multi-elements [39], the deposition rate of present system is significantly higher (more than one order of magnitude). Conduction mechanism for these films has already been explained [30].…”

Power factor investigation of RF magnetron sputtered c-GeSbTe thin film

“…5. Such different sputtering yields of different materials therefore enabled different sputtering rates of charged and neutral species from the single GeSbTe target [15][16]. In addition, because Ge is a lower than binding energy with Sb and Te [17], the Ge atoms are therefore sputtered at the higher percentages on to the film surface.…”

Thermoelectric properties of c -GeSb 0.75 Te 0.5 to h -GeSbTe 0.5 thin films through annealing treatment effects

“…The results showed that the atomic concentration of the as-deposited GeSbTe thin films was approximately 44.2%, 32.3%, and 23.5% for Ge, Sb, Te, respectively, indicate that 1:0.75:0.5 for Ge:Sb:Te (GeSb 0.75 Te 0.5 composition), which was quite different from that of the sputtering target with 1:1:1. A primary reason the as-deposited film yielded such composition was because of high plasma density, which enabled high sputtering rate of charged and neutral species from the targets [29,30]. Another crucial reason was the difference in the sputtering yields of the Ge, Sb, and Te atoms, which have been reported at approximately 0.364, 1.216, 2.063 atoms/ion at 100 eV Ar energy, or at 2.30, 6.15, and 9.91 atoms/ion at 1 keV Ar energy [31].…”