Study of the three-dimensional distribution of defects in crystals by synchrotron radiation diffraction tomography

Kvardakov, V. V.; Подурец, К. М.; Schetinkin, S.A.; Baruchel, J.; Härtwig, J.; Schlenker, M.

doi:10.1016/j.nima.2007.01.044

Cited by 15 publications

(10 citation statements)

References 7 publications

(6 reference statements)

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“…[56] The 3D reconstruction of the dislocations and small angle grain boundaries in quartz, diamond, and iron achieved from stacks of section scans are also reported by Kvardakov and compared to the topo-tomography, which is another approach for 3D topography. [57] Ludwig et al proposed the combination of monochromatic topography with routines from tomography to the so called "topo-tomography." [58] The 3D image is reconstructed from many topographs recorded in the same Bragg reflection, while turning the crystal around the diffraction vector.…”

Section: Introductionmentioning

confidence: 99%

X‐Ray Topography—More than Nice Pictures

Danilewsky

2020

Crystal Research and Technology

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X‐ray topography—a well‐known diffraction imaging method—is widely used for the characterization of extended crystal defects like dislocations. Herein, the progress toward the quantification besides the number and nature of dislocations is given. The diffracted images include additional information about tilt and strain, which can be measured in real‐time, thanks to the improved digital detection systems. This allows not only the fast mapping of huge samples like 450 mm diameter Si wafers, the in situ observation of the dislocation, or crack dynamics at high temperatures, but also the stress analysis in electronic devices in operando. In addition to typical white X‐ray beam methods like stacks of section topographs, the monochromatic diffraction laminography allows a 3D representation of the dislocation arrays. The merits and limitations of X‐ray topography are demonstrated by semiconductor materials as an example.

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Section: Introductionmentioning

confidence: 99%

X‐Ray Topography—More than Nice Pictures

Danilewsky

2020

Crystal Research and Technology

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“…For this investigation, X-ray rocking curve imaging (RCI), a directly quantitative version of monochromatic beam Bragg diffraction imaging ("topography") has been used. This technique has been developed at the European Synchrotron Radiation Facility (ESRF), beamline BM05 and allows us to visualize the spatial distribution of the lattice distortion of a single crystal [17][18][19][20][21][22][23][24][25].…”

Section: Introductionmentioning

confidence: 99%

Mono-like silicon ingots grown on low angle misoriented seeds: Defect characterization by synchrotron X-ray diffraction imaging

et al. 2015

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“…More recently, Kvardakov et al (2007) demonstrated the ability to observe the defect distribution in a crystal utilizing section transmission topography and image processing software. This technique also avoids the troublesome use of tomography where the crystal orientation of the sample must be adjusted precisely to the rotation of the goniometer (Kajiwara et al, 2007).…”

Section: Introductionmentioning

confidence: 99%

“…The present paper describes a three-dimensional X-ray diffraction imaging (3D-XRDI) technique, utilizing section transmission (ST) topography, that allows for the production of three-dimensional images but does not involve rotation of the sample around the diffraction vector, instead simply using vertical translation of the sample through the incident beam combined with available imaging software. The technique is similar to that used by Kvardakov et al (2007) but with the acquisition time for each topograph reduced to < 500 ms.…”

Section: Introductionmentioning

confidence: 99%

Three-dimensional X-ray diffraction imaging of process-induced dislocation loops in silicon

et al. 2011

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In the semiconductor industry, wafer handling introduces micro-cracks at the wafer edge and the causal relationship of these cracks to wafer breakage is a difficult task. By way of understanding the wafer breakage process, a series of nano-indents were introduced both into 20 × 20 mm (100) wafer pieces and into whole wafers as a means of introducing controlled strain. Visualization of the three-dimensional structure of crystal defects has been demonstrated. The silicon samples were then treated by various thermal anneal processes to initiate the formation of dislocation loops around the indents. This article reports the three-dimensional X-ray diffraction imaging and visualization of the structure of these dislocations. A series of X-ray section topographs of both the indents and the dislocation loops were taken at the ANKA Synchrotron, Karlsruhe, Germany. The topographs were recorded on a CCD system combined with a high-resolution scintillator crystal and were measured by repeated cycles of exposure and sample translation along a direction perpendicular to the beam. The resulting images were then rendered into three dimensions utilizing open-source three-dimensional medical tomography algorithms that show the dislocation loops formed. Furthermore this technique allows for the production of a video (avi) file showing the rotation of the rendered topographs around any defined axis. The software also has the capability of splitting the image along a segmentation line and viewing the internal structure of the strain fields.

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Study of the three-dimensional distribution of defects in crystals by synchrotron radiation diffraction tomography

Cited by 15 publications

References 7 publications

X‐Ray Topography—More than Nice Pictures

X‐Ray Topography—More than Nice Pictures

Mono-like silicon ingots grown on low angle misoriented seeds: Defect characterization by synchrotron X-ray diffraction imaging

Three-dimensional X-ray diffraction imaging of process-induced dislocation loops in silicon

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