2019
DOI: 10.17485/ijst/2019/v12i37/147207
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Study of the Role of Window Layer Al0.8Ga0.2As on GaAs-based Solar Cells Performance

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Cited by 8 publications
(3 citation statements)
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“…For example, the P max reduces from 31.91 mW/cm 2 to 30.54 mW/cm 2 while conversion efficiency reduces from 23.12% to 22.12% as the window thickness increases from 0.005 to 0.05 µm. This indicates that lower window thickness gives better cell performance, which is attributed to maximize the amount of photon transmitted into the absorber material [9]. From parameter graphs can be found that 0.005 is the optimum thickness for the window.…”
Section: Impact Of Algaas Window Doping and Thicknessmentioning
confidence: 83%
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“…For example, the P max reduces from 31.91 mW/cm 2 to 30.54 mW/cm 2 while conversion efficiency reduces from 23.12% to 22.12% as the window thickness increases from 0.005 to 0.05 µm. This indicates that lower window thickness gives better cell performance, which is attributed to maximize the amount of photon transmitted into the absorber material [9]. From parameter graphs can be found that 0.005 is the optimum thickness for the window.…”
Section: Impact Of Algaas Window Doping and Thicknessmentioning
confidence: 83%
“…The most challenging issue that degrades the GaAs solar cell performance is the surface recombination, which is usually resolved by introducing Aluminum or Indium doped GaAs layers on top, i.e., window layer, and at bottom, i.e., back surface field (BSF) layer, for the cell [8][9]. A literature survey shows that the conversion efficiency for homojunction GaAs varies between 13.75% to 29.75% depending on the cell configuration [3,[6][7][10][11][12].…”
Section: Introductionmentioning
confidence: 99%
“…The most challenging issue that degrades the GaAs solar cell performance is the surface recombination, which is usually resolved by introducing Aluminum or Indium doped GaAs layers on top, i.e., window layer, and at bottom, i.e., back surface field (BSF) layer, for the cell [8][9]. A literature survey shows that the conversion efficiency for homojunction GaAs varies between 13.75% to 29.75% depending on the cell configuration [3,[6][7][10][11][12].…”
Section: Introductionmentioning
confidence: 99%