Study of the radiation hardness of silicon sensors for the XFEL

Fretwurst, E.; Januschek, F.; Klanner, R.; Perrey, H.; Pintilie, I.; Renn, F.

doi:10.1109/nssmic.2008.4774872

Cited by 9 publications

(2 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For this x-ray energy displacement damage effects can be excluded. I/V-, C/V-and TDRC-(Thermally Dielectric Relaxation Current)-measurements on gate controlled diodes and CMOS capacitors fabricated by CiS [14] on 2 kΩcm n-type float zone (FZ) Si have shown that oxide charge density, interface trap density and surface generation velocity saturate, and even decrease beyond a dose of several MGy [11]. Based on the results at…”

Section: Pixel Sensors For the Xfelmentioning

confidence: 99%

“…In the second part (section 2.2) the influence of surface damage effects induced by 12 keV x-rays on the static properties of a proposed n + n FZ Si pixel sensor for the application at the European XFEL is outlined. Here the relevant damage parameters (change of the fixed oxide charge N ox, density of interface traps N it (cm -2 ) and the density of interface traps D it (cm -2 eV -1 )) were taken from experimental data [10,11] and implemented into the Synopsys-TCAD PoS(RD09)019 simulation program. Simulated distributions of the electric potential, electron density and electric field for a specific sensor layout and a given set of damage parameters will be presented and discussed.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Numerical modelling of different Si sensor design for the HEP experiments

Srivastava¹

2010

Proceedings of 9th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors — PoS

View full text Add to dashboard Cite

Radiation damage is one major limitation for the use of silicon sensors in High Energy Physics and for research at synchrotron radiation sources and x-ray Free-Electron-Lasers. In this paper we describe the implementation of experimental results on radiation damage by neutrons and by 12 keV x-rays into the commercial simulation program Synopsys-TCAD and simulate the effects of radiation damage for two different sensor types and radiation fields: i) the dark current, the full depletion voltage and the electric field distribution for p + n magnetic Czochralski Si pad sensors irradiated with neutrons, and ii) the electric field distribution and the breakdown voltage for x-ray irradiated n + n FZ Si pixel sensors for the XFEL. The simulations are part of a comprehensive program to optimize the design of silicon sensors with respect to radiation tolerance.

show abstract

Section: Pixel Sensors For the Xfelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%