Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)

Veselov, D. A.; Shashkin, I. S.; Bobretsova, Yu. K.; Bakhvalov, K. V.; Lutetskiy, A. V.; Kapitonov, V. A.; Pikhtin, N. A.; Сліпченко, С. О.; Sokolova, Z. N.; Tarasov, I. S.

doi:10.1134/s1063782616100249

Cited by 8 publications

(5 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…High-power pulsed diode lasers operating in the eye-safe region of 1400-1700 nm are becoming increasingly important, for applications ranging from EDFA pumping to laser radar technology. However obtaining high output power within this spectral range is a more complex task than for shorter wavelengths of ~ 1 m (see, for a recent example, experimental dependences 2 on Figures 2 and 4 in [1]), owing mainly to higher optical losses at high currents in InGaAsP and AlGaInAs quaternary compound materials capable of laser emission in the eye safe range. The origin of this effect is to a significant degree in the accumulation of carriers in the OCL at high currents (see e.g.…”

Section: Introductionmentioning

confidence: 99%

“…However obtaining high output power within this spectral range is a more complex task than for shorter wavelengths of ∼1 μm (see, for a recent example, experimental dependences 2 on figures 2 and 4 in [1]), owing mainly to higher optical losses at high currents in InGaAsP and AlGaInAs quaternary compound materials capable of laser emission in the eye safe range.…”

Section: Introductionmentioning

confidence: 99%

“…In [7], we developed an analytical theory for the inhomogeneous carrier accumulation in a weakly doped Optical Confinement Layer due to the current flow and its influence on the optical losses, showing that that mechanism was the dominant one in broadened laser structures with a (near-) symmetric position of the active layer (AL) such as the one realised in [1,8]. The theory, which has since been confirmed by both numerical simulations [9,10] and experimental indications [9,11], shows that, due to the diffusion of the holes being much weaker than that of the electrons, the inhomogeneous carrier accumulation at the p-side of the OCL, between the AL and the p-cladding, is considerably stronger than that at the n-side, between the n-cladding and the AL.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Strong doping of then-optical confinement layer for increasing output power of high- power pulsed laser diodes in the eye safe wavelength range

Ryvkin

Avrutin

Kostamovaara

2017

Semicond. Sci. Technol.

View full text Add to dashboard Cite

An analytical model for internal optical losses at high power in a 1.5 μm laser diode with strong n-doping in the n-side of the optical confinement layer is created. The model includes intervalence band absorption by holes supplied by both current flow and two-photon absorption (TPA), as well as the direct TPA effect. The resulting losses are compared with those in an identical structure with a weakly doped waveguide, and shown to be substantially lower, resulting in a significant improvement in the output power and efficiency in the structure with a strongly doped waveguide.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Strong doping of then-optical confinement layer for increasing output power of high- power pulsed laser diodes in the eye safe wavelength range

Ryvkin

Avrutin

Kostamovaara

2017

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…At present, there exists demand for energy-efficient and compact sources of high-power laser pulses with amplitude exceeding 10 W and width shorter than 100 ns. A commonly accepted approach to generation of pulses of this kind is by using semiconductor lasers pumped by an external generator of current pulses [1][2][3][4][5][6][7][8]. Use of an external source of pulses with amplitude of tens of amperes is associated with larger overall dimensions and cost of a finished article.…”

Section: Introductionmentioning

confidence: 99%

Turn-on dynamics and control efficiency of low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors (905 nm) under optical activation of p-GaAs base with external light (1068 nm)

Gavrina¹,

Podoskin²,

Romanovich³

et al. 2019

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The turn-on dynamics and energy efficiency of control over low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors emitting at a wavelength of 905 nm have been experimentally studied in various control modes: (i) optical activation of the p-GaAs base with external light at a wavelength of 1068 nm and (ii) standard mode of control with pulsed current. It was shown that the turn-on of low-voltage lasers-thyristors by long-wavelength light with photon energy lower than the energy gap width of the p-GaAs base occurs via activation of deep levels. It was demonstrated that, for low-voltage lasers-thyristors with maximum blocking voltage of up to 12 V, the turn-on delay times under optical and electrical activation fall in the range 50-1200 ns. Under optical control by external source at a wavelength of 1068 nm, amplitude of optical power introduced into the p-GaAs base reached a value of 300 mW, and the energy absorbed in the p-GaAs base during the control pulse was 30-40 fJ. In the case of the electrical control, the control current density was as high as 20 A cm −2 , and the energy absorbed in the p-GaAs base during the control pulse was 43-47 pJ.

show abstract

“…However, the microscopic mechanism of the thermal expansion anisotropy in BABF has not been investigated. Recently, it is proposed that the thermal effect on the performance of some optical crystal used in laser can be eliminated to some extent below room temperature (Marrazzo et al, 2016 ; Veselov et al, 2016 ; Roitero et al, 2018 ), which provide a feasible method to overcome the problem about the thermal effect. However, the thermal expansion behavior of BABF under low temperature has not been investigated yet, and its performance index below room temperature remain unclear.…”

Section: Introductionmentioning

confidence: 99%

The Anisotropic Thermal Expansion of Non-linear Optical Crystal BaAlBO3F2 Below Room Temperature

et al. 2018

View full text Add to dashboard Cite

Thermal expansion is a crucial factor for the performance of laser devices, since the induced thermal stress by laser irradiation would strongly affect the optical beam quality. For BaAlBO3F2 (BABF), a good non-linear optical (NLO) crystal, due to the highly anisotropic thermal expansion its practical applications are strongly affected by the “tearing” stress with the presence of local overheating area around the laser spot. Recently, the strategy to place the optical crystals in low-temperature environment to alleviate the influence of the thermal effect has been proposed. In order to understand the prospect of BABF for this application, in this work, we investigated its thermal expansion behavior below room temperature. The variable-temperature XRD showed that the ratio of thermal expansion coefficient between along c- and along a(b)- axis is high as 4.5:1 in BABF. The Raman spectrum combined with first-principles phonon analysis revealed that this high thermal expansion anisotropy mainly ascribe to progressive stimulation of the respective vibration phonon modes related with the thermal expansion along a(b)- and c-axis. The good NLO performance in BABF can be kept below room temperature. The work presented in this paper provides an in-depth sight into the thermal expansion behavior in BABF, which, we believe, would has significant implication to the manipulation in atomic scale on the thermal expansion of the materials adopted in strong-field optical facility.

show abstract

Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)

Cited by 8 publications

References 10 publications

Strong doping of then-optical confinement layer for increasing output power of high- power pulsed laser diodes in the eye safe wavelength range

Strong doping of then-optical confinement layer for increasing output power of high- power pulsed laser diodes in the eye safe wavelength range

Turn-on dynamics and control efficiency of low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors (905 nm) under optical activation of p-GaAs base with external light (1068 nm)

The Anisotropic Thermal Expansion of Non-linear Optical Crystal BaAlBO3F2 Below Room Temperature

Contact Info

Product

Resources

About