2015
DOI: 10.1088/0953-8984/27/25/256002
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Study of the negative magneto-resistance of single proton-implanted lithium-doped ZnO microwires

Abstract: The magneto-transport properties of single proton-implanted ZnO and of Li(7%)-doped ZnO microwires have been studied. The as-grown microwires were highly insulating and not magnetic. After proton implantation the Li(7%) doped ZnO microwires showed a non-monotonous behavior of the negative magneto-resistance (MR) at temperature above 150 K. This is in contrast to the monotonous NMR observed below 50 K for proton-implanted ZnO. The observed difference in the transport properties of the wires is related to the am… Show more

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Cited by 10 publications
(19 citation statements)
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“…All Li-doped ZnO microwires are highly insulating with a resistance larger than 10 10 Ω at room temperature [14]. At the energy used for implantation of H + in our samples, a significant concentration of protons as well as defects (Zn-and O-vacancies) are localized only within a ∼ 10 nm surface region according to SRIM simulations [20] (see also Fig.…”
Section: Methodsmentioning
confidence: 97%
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“…All Li-doped ZnO microwires are highly insulating with a resistance larger than 10 10 Ω at room temperature [14]. At the energy used for implantation of H + in our samples, a significant concentration of protons as well as defects (Zn-and O-vacancies) are localized only within a ∼ 10 nm surface region according to SRIM simulations [20] (see also Fig.…”
Section: Methodsmentioning
confidence: 97%
“…For comparison, a second ZnO wire without Li doping but with a similar proton implantation dose as the first one, has also been measured. This latter wire does not show any magnetic order at room temperature [14]. Both microwires are characterized by 1/f -like noise.…”
Section: Introductionmentioning
confidence: 88%
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