Thin ZnS:Mn, Cu, Cl films exhibiting dc electroluminescence of Mn+2 are prepared by a three step method involving: (i) evaporation of pure ZnS layer, (ii) dipping in CuCl solution, and (iii) evaporation of ZnS:Mn, Cl top layer. In order to obtain some information about the effects accompanying the electroluminescence, measurements of the conductance as a function of temperature, dc field and ac field frequency as well as capacitance‐voltage characteristic were carried out. The results indicate that hopping is the predominant mechanism in the conductivity of a virgin (unformed) ZnS: Mn, Cu, Cl layer while a field enhanced crystallization is responsible for forming, ageing, and the appearance of the dc electroluminescence at an appropriate stage of the forming process.