2018
DOI: 10.1039/c7cy02252b
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Study of the layer-dependent properties of MoS2 nanosheets with different crystal structures by DFT calculations

Abstract: The main features of the electronic structure of MoS2 nanosheets are contributed by the intra-layer interaction, and the inter-layer interaction only induces slight perturbation. But the latter has an important influence on the electronic structure of MoS2 ultrathin nanosheets, especially the monolayer.

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Cited by 109 publications
(57 citation statements)
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“…The band formation of ReS 2 is constructed by the references 42,43 . The measured DT/FN barrier heights are higher than the prediction of Schottky-type barrier due to interfacial band alignment 42,[44][45][46] . Due to the abundant intrinsic sulfur vacancies of the 1L MoS 2 , the Fermi level is close to the conduction band minimum 47,48 , hence the lowest potential difference between forward bias and reverse bias is close 0 eV, due to the highly symmetric I-V behaviors (Fig.…”
Section: Discussionmentioning
confidence: 56%
“…The band formation of ReS 2 is constructed by the references 42,43 . The measured DT/FN barrier heights are higher than the prediction of Schottky-type barrier due to interfacial band alignment 42,[44][45][46] . Due to the abundant intrinsic sulfur vacancies of the 1L MoS 2 , the Fermi level is close to the conduction band minimum 47,48 , hence the lowest potential difference between forward bias and reverse bias is close 0 eV, due to the highly symmetric I-V behaviors (Fig.…”
Section: Discussionmentioning
confidence: 56%
“…In general, the linear absorption increases as the sample thickness is enlarged, according to Beer–Lambert law (i.e., where T is the transmittance, α is the absorption coefficient, and d is the sample thickness). The sample-thickness-dependent property variations have been reported for various saturable absorption materials such as TIs, TMDCs, and BP 84 – 89 . The bandgap energies of the materials are known to change depending on the layer number.…”
Section: Resultsmentioning
confidence: 99%
“…MoS 2 mainly has three possible polymorphs, including 1T′‐MoS 2 (space group of P 2 1 / m ), 2H‐MoS 2 (space group of P 6 3 / mmc ) and 3R‐MoS 2 (space group of R 3 m ). [ 97 ] The 2H‐MoS 2 phase with larger binding energy was regarded as a thermodynamically stable semiconductor, while 1T′‐MoS 2 and 3R‐MoS 2 were common intermediate phase and possessed metallic characteristics. In general, the crystal structure of MoS 2 is composed of stacked sandwich‐like S‐Mo‐S layers, in which the layers are correlated by the weak van der Waals interaction.…”
Section: Binary Metal Sulfide Photocatalystsmentioning
confidence: 99%