Study of the interface of undoped and p-doped ZnSe with GaAs and AlAs

Abstract

We have used electrolyte electroreflectance (EER) to characterize ZnSe/GaAs and ZnSe/AlAs interfaces. The great sensitivity of EER to interface space-charge regions enabled us to detect both interface crossover transitions and transitions to triangular-well interface states. The observation of these transitions provides the first unambiguous proof that the ZnSe/GaAs interface is type I and allowed us to determine the band offsets and band bendings, the diffusion lengths across each interface, and the amount of interdiffusion.

Raman spectroscopic studies of ZnSe/GaAs interfaces

“…11 The molecular beam epitaxial growth of thin layers of ZnSe on GaAs results in new charge distribution at the interface, the diffusion of Zn as an acceptor into GaAs and Ga as a donor into ZnSe during sample growth. This produces an intrinsic band-bending at the interface 12 It is known that in highly doped polar semiconductors the plasma oscillation and the bulk LO phonons couple via their macroscopic electric fields. 13 The coupled modes split into two branches for a donor-doped semiconductor.…”

Interfacial electronic trap lifetimes studied by the photomodulation of second-harmonic generation processes

“…It is well known that band bending at the junction of two dissimilar semiconductors can lead to new electronic states. 9 " 0 Recently we reported on the observation of such a state in ZnSe-GaAs(001) heterostructures when we used second-harmonic generation (SHG). 4 The secondharmonic spectral feature, at 2.72 eV, results from a virtual transition between the ZnSe valence band and a resonance state of a quantum well located across the junction in the GaAs conduction band.…”

New Theoretical Treatment of Electroreflectance from Surfaces and Interfaces Having Large Built-in Fields

“…Recently, Jackson and Seebauer' 2 have shown that such a WKB approach is more reliable than a laminar approach such as that of ref. 7 under essentially all conditions.…”