Study of the influence of the precursors on the sensing properties of ZnO:Cu system

Ramos, Aquino; Urbieta, A.; Escalante, G.; Hidalgo, P.; Espinós, J.P.; Fernández, Paloma

doi:10.1016/j.ceramint.2019.12.068

Cited by 3 publications

(2 citation statements)

References 27 publications

(28 reference statements)

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“…In addition, the peak that appears at the binding energy of 953.4 eV corresponds to Cu 2p 1/2 . It is worth noting that the intensities of the oscillatory satellite peaks corresponding to Cu 2p at 941.4–943.4 eV are significantly different in the two devices, which can be ascribed to the sudden change of the Coulomb potential as a photogenerated electron passes through the valence band. − The results of the XPS analysis of O 1s in the two devices are shown in Figure g, demonstrating that the oxygen elements in the two devices exist in the form of lattice oxygen (red line) and oxygen vacancies (blue line). In detail, the characteristic peak at 529.2 eV presents in both devices corresponds to the lattice oxygen.…”

Section: Resultsmentioning

confidence: 99%

A Digital–Analog Integrated Memristor Based on a ZnO NPs/CuO NWs Heterostructure for Neuromorphic Computing

Wang

Zhang

et al. 2022

ACS Appl. Electron. Mater.

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As an emerging electronic device, a memristor facilitates the realization of neuromorphic computing systems. However, high-performance neuromorphic computing systems require not only robust analog memristors but also digital memristors with complementary functions. Here, a digital–analog integrated memristor based on Al/ZnO NPs/CuO NWs/Cu is proposed and demonstrated. First, the electrical properties of the CuO NWs based device are investigated, which exhibit a write-once-read-many-times (WORM) performance. Then, typical bipolar resistive switching behaviors are realized by spin-coating the ZnO NPs to form an Al/ZnO NPs/CuO NWs/Cu based memristor. Through tuning of the applied voltage, an abrupt-to-gradient transition of conductance is achieved in situ. Several analog behaviors, such as long-term potentiation/depression (LTP/LTD), and paired-pulse facilitation/depression (PPF/PPD) are effectively emulated by applying a series of specified electrical measurements to the memristor, which proves the achievement of a digital–analog integrated memristor. Furthermore, on the basis of the LTD and LTP behaviors of the memristor, neural network simulations for handwritten recognition are implemented. The results reveal high recognition accuracies of up to 93%, which are close to the performances for ideal memristors.

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Section: Resultsmentioning

confidence: 99%

A Digital–Analog Integrated Memristor Based on a ZnO NPs/CuO NWs Heterostructure for Neuromorphic Computing

Wang

Zhang

et al. 2022

ACS Appl. Electron. Mater.

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“…This combination opens a good opportunity to investigate the evolution of the sensing properties on moving from n-to p-type conductivity and the sensing properties of p-n junctions of different materials [14,15,16]. On the other hand, the large segregation effects observed in this system [17,18] gives us the opportunity to investigate the enhancement of sensing behaviour of the composites [19,20,21]. Finally, n-p junctions made with ZnO and CuO nanowires have shown to be a good option to control the selectivity of the sensor [10].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of ZnO:CuO Electronic Composites for Their Application in Sensing Processes

et al. 2021

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Sensing behaviour of samples belonging to the system ZnO:CuO has been investigated. Samples with different proportions of ZnO and CuO have been sintered and exposed to a reducing agent as ethanol (C2H5OH). All the samples have been characterized not only from the point of view of the sensing properties but also regarding morphology, composition, crystallinity and luminescent properties in order to correlate these properties to the sensing behaviour. Sensitivity, response times, recovery and stability have been measured under exposure to ethanol vapour in concentrations 800, 4700 and 16000 ppm. Sensing cycles have been performed at three different temperatures: 25, 50 and 100°C.

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ZnO:CuO Composites Obtained by Rapid Joule Heating for Photocatalysis

Fernández-Calzado,

Calvo-Villoslada,

Fernández

et al. 2024

Materials

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Semiconductor oxides belonging to various families are ideal candidates for application in photocatalytic processes. One of the challenges facing photocatalytic processes today is improving their efficiency under sunlight irradiation. In this study, the growth and characterization of semiconductor oxide nanostructures and composites based on the ZnO and CuO families are proposed. The selected growth method is the resistive heating of Zn and Cu wires to produce the corresponding oxides, combined with galvanic corrosion of Zn. An exhaustive characterization of the materials obtained has been carried out using techniques based on scanning electron microscopy and optical spectroscopies. The method we have followed and the conditions used in this study present promising results, not only from a degradation efficiency point of view but also because it is a cheap, easy, and fast growth method. These characteristics are essential in order to scale the process beyond the laboratory.

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Study of the influence of the precursors on the sensing properties of ZnO:Cu system

Cited by 3 publications

References 27 publications

A Digital–Analog Integrated Memristor Based on a ZnO NPs/CuO NWs Heterostructure for Neuromorphic Computing

A Digital–Analog Integrated Memristor Based on a ZnO NPs/CuO NWs Heterostructure for Neuromorphic Computing

Fabrication and Characterization of ZnO:CuO Electronic Composites for Their Application in Sensing Processes

ZnO:CuO Composites Obtained by Rapid Joule Heating for Photocatalysis

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