1997
DOI: 10.1016/s0040-6090(97)00104-1
|View full text |Cite
|
Sign up to set email alerts
|

Study of the influence of oxygen on the composition of thin films obtained by r.f. sputtering from a Ca5(PO4)3 OH target

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

2
32
2

Year Published

1998
1998
2013
2013

Publication Types

Select...
8

Relationship

2
6

Authors

Journals

citations
Cited by 43 publications
(36 citation statements)
references
References 9 publications
2
32
2
Order By: Relevance
“…50) The kinetic energy of argon ions could increase with increasing RF power and C O 2 at a specific RF power 49) and with decreasing total pressure. 33) The increase in kinetic energy of argon ions would cause the increase in kinetic energy for sputtering the target, and then the atoms or clusters could arrive at the substrate with higher kinetic energy accelerating the crystallization.…”
Section: Phase and Composition Of Filmsmentioning
confidence: 99%
See 2 more Smart Citations
“…50) The kinetic energy of argon ions could increase with increasing RF power and C O 2 at a specific RF power 49) and with decreasing total pressure. 33) The increase in kinetic energy of argon ions would cause the increase in kinetic energy for sputtering the target, and then the atoms or clusters could arrive at the substrate with higher kinetic energy accelerating the crystallization.…”
Section: Phase and Composition Of Filmsmentioning
confidence: 99%
“…It was reported that the deposition rate decreased drastically by adding 1% O 2 to the sputtering gas. 49) It is known that high energy electrons also contribute the deposition in RF magnetron sputtering. Since O 2 would catch electrons to ionize O atoms as called ''electron scavenger'', the increase in C O 2 causes the decrease in deposition rates as demonstrated in Fig.…”
Section: )mentioning
confidence: 99%
See 1 more Smart Citation
“…Previous studies have shown how various aspects of the sputtering technique, such as argon gas pressure 35) , voltage 36) , presence of oxygen species 37) , and discharge power level 38) could significantly influence the calcium and phosphate concentrations. We believe that the dual sputtering deposition technique is an appropriate coating technique for controlling HA and TiO2 deposition; it can change a surface to a positive charge and also control the surface electric charge intensity on a titanium surface.…”
Section: Discussionmentioning
confidence: 99%
“…Oxygen was used for a better stoichiometry of the HAP film deposited on the murine femurs. 27 Deposition parameters during sputtering were as follows: argon flow rate 140 sccm, oxygen flow rate 10 sccm, chamber pressure 6.4 · 10 -3 Torr, and input power level 140 W. HAP was deposited at a rate of 25-30 nm/h. Murine femurs were mounted at their ends by a vacuum tape to a planar steel platform 150 mm from the sputtering target; after deposition to the desired thickness, each femur was rotated about its longitudinal axis by 180°, and the entire deposition process was repeated.…”
Section: Physical Vapor Deposition Of Hapmentioning
confidence: 99%