2023
DOI: 10.1016/j.triboint.2022.108087
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Study of the humidity-controlled CeO2 fixed-abrasive chemical mechanical polishing of a single crystal silicon wafer

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Cited by 20 publications
(2 citation statements)
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“…Furthermore, the bond energy of the Ce–O bond is greater than that of the Si–O bond, and the –OH adsorption and strain shear stress at the friction interface had weakened the activation energy belonging to the Si–Si bonds, which promoted the breaking of the Si–Si bonds in Si–Si–O–Ce on the substrate. 54,55 The new Si atoms were exposed, as depicted in Fig. 11(c).…”
Section: Resultsmentioning
confidence: 99%
“…Furthermore, the bond energy of the Ce–O bond is greater than that of the Si–O bond, and the –OH adsorption and strain shear stress at the friction interface had weakened the activation energy belonging to the Si–Si bonds, which promoted the breaking of the Si–Si bonds in Si–Si–O–Ce on the substrate. 54,55 The new Si atoms were exposed, as depicted in Fig. 11(c).…”
Section: Resultsmentioning
confidence: 99%
“…It was first developed by IBM for the production of a 64 MB DRAM. It then progressed rapidly and was widely applied in the manufacture of the first generation of semiconductor single-crystal silicon [244,245]. This technology was originally called chemical mechanical planarization because that was the purpose why it was invented.…”
Section: Chemical-assisted Polishingmentioning
confidence: 99%