Study of the growth mechanisms of chromium nitride films deposited by vacuum ARC evaporation

Gautier, C.; Machet, J.

doi:10.1016/s0040-6090(96)09164-x

Cited by 94 publications

(37 citation statements)

References 26 publications

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“…Nitrogen content measured by EDS was about 49 at % when V b = -30 V and 47at% for V b = -130 V. This suggests that the nitrogen content of the deposited films was reduced by high energy ion bombardments. This result is in agreement with previous reports by T. Hurkmans et al 7) and C. Gautier et al 8) Fig . 3 shows XRD spectra of CrN films deposited under different substrate bias voltages.…”

Section: Methodssupporting

confidence: 94%

Effect of Substrate Bias Voltage on the Growth of Chromium Nitride Films

Jang¹,

Kim²,

Lee³

et al. 2007

Korean. J. Mater. Res.

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Chromium nitride (CrN) films were deposited on silicon substrate by RF magnetron sputtering assisted by inductive coupled nitrogen plasma without intentional substrate heating. Films were deposited with different levels of bombarding energy by nitrogen ions (N + ) to investigate the influence of substrate bias voltage (V b ) on the growth of CrN thin films. XRD spectra showed that the crystallographic structure of CrN films was strongly affected by substrate bias voltage. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) results showed that surface roughness and grain size of the CrN films varied significantly with bias voltage. For -80 V b depositions, the CrN films showed bigger grain sizes than those of other bias voltage conditions. The lowest surface roughness of 0.15 nm was obtained from the CrN films deposited at -130 V b .

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Section: Methodssupporting

confidence: 94%

Effect of Substrate Bias Voltage on the Growth of Chromium Nitride Films

Jang¹,

Kim²,

Lee³

et al. 2007

Korean. J. Mater. Res.

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“…For the (111) plane of fcc NaCl structured CrN, pure nitrogen and pure chromium layers are alternatively presented, whereas the (200) and (220) planes contain both nitrogen and chromium atoms. 2 The (200) planes are the densest planes (4 atoms/a 2 , a is the lattice parameter of CrN) and the distance between crystal planes is also the largest (0.5 a) in CrN. 3,4 Meanwhile, the plane density and the distance between the crystal planes of (220) and (111) are 2.83 atoms/a 2 , 2.31 atoms/a 2 , and 0.354 a, 0.289 a, respectively.…”

Section: Pulse Frequency Effectmentioning

confidence: 99%

“…The texture of thin films developed by PVD process has been discussed extensively. 2,3 Film texture can be influenced by deposition methods and processing variables, energetic ion bombardment, nature of the substrate, and geometrical confinement by surface features. 1 The poisoning of metal targets is common during the reactive direct current (DC) sputtering process of thin films.…”

Section: Introductionmentioning

confidence: 99%

The effects of substrate bias, substrate temperature, and pulse frequency on the microstructures of chromium nitride coatings deposited by pulsed direct current reactive magnetron sputtering

Lee

Tien

Kuo

2005

Journal of Elec Materi

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Recently, great attention has been devoted to the pulsed direct current (DC) reactive magnetron sputtering technique, due to its ability to reduce arcing and target poisoning, and its capability of producing insulating thin films. In this study, chromium nitride (CrN) coatings were deposited by the bipolar symmetric pulsed DC magnetron reactive sputtering process at different pulse frequency, substrate bias voltage, and the substrate temperature. It was observed that the texture of CrN changed from (111) to (200) as substrate temperature increased to 300°C as deposited at 2 kHz without substrate bias. With increasing pulsing bias and pulse frequency of target, predominated (200) orientation of CrN film was shown due to the ion bombardment/ channeling effect to preferentially sputter those unaligned planes. For the CrN coatings deposited with pulsed biasing, the grain size decreased with increasing pulse frequency and substrate bias, whereas the surface roughness showed a reverse trend. The deposition rate of the CrN films decreased with increasing pulse frequency. It was concluded that the pulse frequency, substrate bias, and substrate temperature played important role in the texture, microstructure, and surface roughness of the CrN coatings deposited by the pulsed DC magnetron sputtering process.

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“…Кинетика релаксационных процессов в нанокристаллических соединениях рассмотрена в работе [110]. Рассмотрены механизмы и кинетика термически активированных процессов релаксации не-равновесных структур в нанокристаллических соединениях (вос-становление ближнего и дальнего порядка, рекристаллизация, рост доменов и релаксация внутренних напряжений).…”

Section: формирование высокотемпературных фаз в плёнках на основе Tiunclassified

Structure, Properties and Fabrication of the Solid Nanocrystalline Coatings Deposited in Several Ways

Beresnev¹,

Pogrebnyak

Azarenkov

et al. 2007

Usp. Fiz. Met.

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Study of the growth mechanisms of chromium nitride films deposited by vacuum ARC evaporation

Cited by 94 publications

References 26 publications

Effect of Substrate Bias Voltage on the Growth of Chromium Nitride Films

Effect of Substrate Bias Voltage on the Growth of Chromium Nitride Films

The effects of substrate bias, substrate temperature, and pulse frequency on the microstructures of chromium nitride coatings deposited by pulsed direct current reactive magnetron sputtering

Structure, Properties and Fabrication of the Solid Nanocrystalline Coatings Deposited in Several Ways

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