Study of the electroluminescence performance of NiO-based quantum dot light-emitting diodes: The effect of annealing atmosphere

Flexible Substrate-Compatible and Efficiency-Improved Quantum-Dot Light-Emitting Diodes with Reduced Annealing Temperature of NiOx Hole-Injecting Layer

“…The increase was also evident in the O 1s spectra, rising from 32.5% for the pristine NiO x to 33.6% for the 4–CF 3 –BA-modified NiO x . Previous studies have shown that the presence of NiO(OH) in the film is attributed to the generation of Ni vacancies, with the interchange between Ni 2+ and Ni 3+ facilitating hole transport [ 14 ]. Consequently, the increased Ni 3+ component contributes to enhanced conductivity in the NiO x film.…”

“…Recently, non-stoichiometric transition metal oxide, NiO x , has attracted extensive attention as a promising hole-injection/-transporting layer in QLEDs [ 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 ], OLEDs [ 21 , 22 ], perovskite light-emitting diodes [ 23 , 24 ], and perovskite solar cells [ 25 , 26 ]. The approaches to preparing the NiO x layers include vacuum-based techniques (e.g., sputtering [ 11 , 18 ], thermal evaporation [ 25 ], and pulsed-laser deposition [ 26 ]) and solution-based methods (e.g., sol-gel [ 12 , 13 ] and solution-combustion [ 15 , 21 ]).…”

SeO2 Microwires Designed as Low‐Temperature Abrupt Microelectronic Switches, Negative Resistance, and Negative Dielectric Constant Sources

“…[ 8 ] It also improves the electrical conductivity of the SeO 2 microwires. [ 9 ] Generally, excess oxygen means the presence of Se vacancies in the microwires. Se vacancies cause electron localization near defective regions leading to the formation of defective levels and trap states in the band gap of SeO 2 microwires.…”

Efficient CsPbBr3 Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers

“…In addition, quasi-2D perovskite LEDs using NiO as hole injection materials have been reported to control interface defects and improve carrier transporting for efficient devices [12]. Although solution-processed NiO films were chosen to be a replaceable material in the optoelectronic devices [7,9,[12][13][14][15][16], the sputtering process for NiO films is more promising and feasible because of its high throughput, mass production, and excellent fabrication stability. However, to the best of our knowledge, no studies regarding the sputtered NiO films for perovskite QD-LEDs were reported.…”