Abstract:The implementation of boron in several fields, such as in the creation of p-type semiconductors in electronics, has created the need for the accurate quantitative determination of its depth profile concentrations in near surface layers of various matrices. In the framework of IBA techniques a combination of Elastic Backscattering Spectroscopy, along with Nuclear Reaction Analysis, has been proposed in order to address the current needs for boron depth profiling, focusing on the use of proton beams. Deuteron be… Show more
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