Study of the effect of amine additives on LWR and LER

Houlihan, Francis M.; Rentkiewicz, David; Lin, Guanyang; Rahman, Dalil; Mackenzie, D. H.; Timko, Allen G.; Kudo, Takanori; Anyadiegwu, Clement; Thiyagarajan, Muthiah; Chiu, Simon; Romano, Andrew; Dammel, Ralph R.; Padmanaban, Munirathna

doi:10.1117/12.659465

Cited by 3 publications

(4 citation statements)

References 6 publications

(11 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Alternative strategies, such as incorporating amines within the backbone or even as a photo decomposable base would provide a test of the effect of base counter-diffusion by limiting segregation and mobility of the base that may increase, or decrease LWR/LER. [ 59 ] …”

Section: Amine Acting As a Model Photodegradable Base At Line-edgementioning

confidence: 97%

“…The general hydrophobicity and size of the amine quencher could further reduce photoacid diffusion. Houlihan et al proposed that the amine quenchers may segregate or partition into the protected and deprotected domains during the PEB [ 59 ] depending on the relative hydrophobicity. Further, the reactivity with the photoacid may be controlled by the pK a of the amine.…”

Section: Amine Acting As a Model Photodegradable Base At Line-edgementioning

confidence: 98%

“…Further, the reactivity with the photoacid may be controlled by the pK a of the amine. [ 59 ] While lithographic evidence is present on some photoresist/quencher pairs the general relationship between transport of amine quenchers and preferential segregation are poorly understood.…”

Section: Amine Acting As a Model Photodegradable Base At Line-edgementioning

confidence: 99%

See 2 more Smart Citations

Photoresist Latent and Developer Images as Probed by Neutron Reflectivity Methods

Prabhu¹,

Kang²,

VanderHart³

et al. 2010

Advanced Materials

View full text Add to dashboard Cite

Photoresist materials enable the fabrication of advanced integrated circuits with ever-decreasing feature sizes. As next-generation light sources are developed, using extreme ultraviolet light of wavelength 13.5 nm, these highly tuned formulations must meet strict image-fidelity criteria to maintain the expected performance gains from decreases in feature size. However, polymer photoresists appear to be reaching resolution limits and advancements in measurements of the in situ formed solid/solid and solid/liquid interface is necessary. This Review focuses on the chemical and physical structure of chemically amplified photoresists at the lithographic feature edge at length scales between 1 nm and 100 nm. Neutron reflectivity measurements provide insight into the nanometer-scale composition profiling of the chemical latent image at an ideal lithographic line-edge that separates optical resolution effects from materials processing effects. Four generations of advanced photoresist formulations were examined over the course of seven years to quantify photoresist/photoacid and photoresist/developer interactions on the fidelity of lithographic features. The outcome of these measurements complement traditional resist design criteria by providing the effects of the impacts of the photoresist and processing on the feature fidelity. These physical relations are also described in the context of novel resist architectures under consideration for next-generation photolithography with extreme-ultraviolet radiation.

show abstract

Section: Amine Acting As a Model Photodegradable Base At Line-edgementioning

confidence: 97%

Section: Amine Acting As a Model Photodegradable Base At Line-edgementioning

confidence: 98%

See 1 more Smart Citation

Photoresist Latent and Developer Images as Probed by Neutron Reflectivity Methods

Prabhu¹,

Kang²,

VanderHart³

et al. 2010

Advanced Materials

View full text Add to dashboard Cite

show abstract

“…Therefore studies of LER/LWR with these resolution enhancement techniques are important for future process design. Previously we discussed the origins of LER from material side, and reported influence of hard bake and RELACS™ on LER [1] and structure relationship of amine quenchers with LER [2]. In this paper, we report the influence of various process factors on LER/LWR and the mechanism of line roughness are discussed along with aerial image contrast, absorbance of resists and pattern profiles.…”

Section: Introductionmentioning

confidence: 94%

Some non-resist component contributions to LER and LWR in 193-nm lithography

et al. 2007

Self Cite

View full text Add to dashboard Cite

Improvement of line edge roughness (LER) and line width roughness (LWR) is required for integration of semiconductor devices. This paper describes various process factors affecting LER/LWR of 193 nm resists such as mask layout (bright field/dark field), pitches, optical settings, substrates, film thickness, baking temperature and development condition. The origins of line roughness are discussed in view of aerial image contrast, transmittance of resists and pattern profiles. Bright field mask exhibited lower LER/LWR values than dark field mask, LER/LWR deteriorated as larger pitches and illumination condition affected roughness and these results are explained using normalized image log-slope (NILS). BARC dependence of line roughness is explained by pattern profile difference due to interactions between resist and BARC and in some cases BARC reflectivity. Contributions of film thickness, SB & PEB temperature and development condition to line roughness are also reported.

show abstract

Influence of base additives on the reaction-diffusion front of model chemically amplified photoresists

Vogt

Kang

Prabhu

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

The effects of amine base quencher on the photoacid catalyzed deprotection reaction-diffusion front in model photoresists were measured by combination of neutron reflectivity and Fourier transform infrared spectroscopy. Modulation in the location of the base with respect to the diffusing photoacid catalyst changes the spatial reaction extent and illuminates the complex role of the base on the shape of the reaction-diffusion front. Despite similar total extents of reaction, a comparison between uniform base and model photodegradable base distributions demonstrates distinct reaction time and base concentration effects on the deprotection profile shape. These differences arise from the modification of the initial deprotection extent due to both the neutralization of the photoacid and the influence of the changing photoresist composition on the reaction-diffusion process. The use of the model photodegradable base results in a sharper front due to these effects. Lastly, aqueous hydroxide development of these latent images demonstrates a limit to the improvement in feature quality obtained from sharpening of the deprotection profile with base additives.

show abstract

Study of the effect of amine additives on LWR and LER

Cited by 3 publications

References 6 publications

Photoresist Latent and Developer Images as Probed by Neutron Reflectivity Methods

Photoresist Latent and Developer Images as Probed by Neutron Reflectivity Methods

Some non-resist component contributions to LER and LWR in 193-nm lithography

Influence of base additives on the reaction-diffusion front of model chemically amplified photoresists

Contact Info

Product

Resources

About