Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurements

Hayashi, Kazushi; Yamanaka, Sadanori; Okushi, Hideyo; Kajimura, K.

doi:10.1063/1.116690

Cited by 224 publications

(53 citation statements)

References 8 publications

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“…However, serious problems exist in conventional devices using B-doped diamond due to the deep acceptor level of 0.37 eV [8]. B-doped diamond is in the extrinsic region at room temperature, i.e., 0.01% of the doped B atoms are activated at 297 K [8]. Hence, B-doped diamond exhibits a high, temperature-dependent resistivity around room temperature.…”

Section: Introductionmentioning

confidence: 99%

“…For this reason, research into diamond devices has concentrated on p-type unipolar devices [57]. However, serious problems exist in conventional devices using B-doped diamond due to the deep acceptor level of 0.37 eV [8]. B-doped diamond is in the extrinsic region at room temperature, i.e., 0.01% of the doped B atoms are activated at 297 K [8].…”

Section: Introductionmentioning

confidence: 99%

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Application and device modeling of diamond FET using surface semiconductive layers

Tsugawa

Noda

Hokazono

et al. 1998

Electron. Comm. Jpn. Pt. II

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Application and device modeling of diamond FET using surface semiconductive layers

Tsugawa

Noda

Hokazono

et al. 1998

Electron. Comm. Jpn. Pt. II

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“…An Ar ϩ laser (ϭ488 nm) with 50 mW power was used for recording the spectra. Conducting layer 7 on as grown CVD diamond films often leads to problems in measuring bulk electrical conductivity. To avoid this leakage current we cut all sides of the silicon substrates after diamond growth prior to making the windows.…”

Section: Methodsmentioning

confidence: 99%

“…On the other hand CVD diamond exhibits a low value of the resistivity ͑on the order of 10 6 ⍀ cm͒. [3][4][5][6][7]24 It is also shown that annealing of the films in the inert atmosphere or vacuum decreases the value of 300 by several orders of the magnitude. 24 Here we report the effect of annealing on the 300 of the sheets grown with different deposition conditions.…”

Section: Annealing Studiesmentioning

confidence: 99%

“…It is well known that as deposited CVD diamond films have a highly conductive layer on the surface, which can be removed by treating the layer with either acid or oxygen plasma. 1,2 Many authors [3][4][5][6][7] have studied the influence of hydrogen on electrical conductivity of the films. It has been found that the conductivity of CVD diamond decreases several orders of magnitude by the thermal annealing and that the subsequent treatment with hydrogen plasma restores the conductivity to its initial value.…”

Section: Introductionmentioning

confidence: 99%

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Interesting trends in direct current electrical conductivity of chemical vapor deposited diamond sheets

Sikder

Misra

Palnitkar

et al. 2001

Journal of Applied Physics

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Self-supported diamond sheets of the thickness ranging from 15 to 30 μm were prepared using hot filament chemical vapor deposition technique. The controlled variation of the deposition parameters resulted in the sheets with varying amount of nondiamond impurities. Routine characterization of the sheets was carried out using scanning electron microscopy, x-ray diffractometry, Raman spectroscopy, Fourier transform infrared spectroscopy, and Positron annihilation spectroscopy techniques. Detailed measurements of room temperature electrical conductivity (σ300), current–voltage (I–V) characteristics, and annealing studies on the sheets deposited with various structural disorder have yielded useful information about the electrical conduction in this interesting material. σ300 and I–V characteristic measurements were done in sandwiched configuration taking care off the surface effects. The diamond sheets deposited at low deposition pressure (Pd<60 Torr) contain negligible nondiamond impurities and show σ300≅10−6–10−7 S.cm−1. The I–V characteristics in these sheets show space charge limited conduction behavior with I∝Vn and n>1, in high voltage range. In contrast the sheets deposited at higher pressure (60 Torr and higher), containing high concentration of nondiamond impurities, show a sharp reduction in the values of σ300. Interestingly, the conduction in these sheets is ohmic with n values nearly equal to unity. Similarly the sheets deposited with nitrogen also show a sharp reduction in σ300. Annealing of all types of diamond sheets results in a decrease in σ300 values by several orders of magnitude. In the sheets deposited at low Pd, the n values increase sharply with annealing. On the other hand the values of n in the sheets deposited at higher pressure remain constant with annealing. The above results are explained in terms of hydrogen abstraction from the traps and compensation of donor–acceptor pairs.

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Ohmic Contacts for Phosphorus-Doped n-Type Diamond

Teraji

Koizumi

Kanda

2000

phys. stat. sol. (a)

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Electric contacts for phosphorus (P)-doped n-type diamond films have been studied. The P-doped {111} homoepitaxial diamond thin films with n-type conduction are grown on high temperature high pressure diamond substrates by microwave-enhanced plasma chemical vapor deposition. The donor density and crystallinity of the phosphorus-doped diamond films were varied depending on the growth conditions. Metals with different work function and different reactivity to diamond films were deposited on the P-doped diamond films as electrodes. Ion implantation was also applied for introducing electrically active defects in diamond films. We found that n-type rectification properties with average Schottky barrier height of 2.4 eV were obtained from both Au and Cu contacts deposited on lightly doped diamond films with donor density N D of 5 Â 10 17 cm ±3 . Ohmic properties were obtained from electrodes on heavily doped layer with N D of over 1 Â 10 19 cm ±3 . Electrodes formed on the diamond film with electrically active defects also show Ohmic properties. These features indicate that the behavior of contacts formed on P-doped n-type diamond films is similar to those on typical n-type semiconductors.

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Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurements

Abstract: Investigation of the effect of hydrogen on electrical and optical properties in chemical vapor deposited on homoepitaxial diamond films Hall effect measurements on borondoped, highly oriented diamond films grown on silicon via microwave plasma chemical vapor deposition

Cited by 224 publications

References 8 publications

Application and device modeling of diamond FET using surface semiconductive layers

Application and device modeling of diamond FET using surface semiconductive layers

Interesting trends in direct current electrical conductivity of chemical vapor deposited diamond sheets

Ohmic Contacts for Phosphorus-Doped n-Type Diamond

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