Study of the dependence of the degree of disordering of the surface layers of Si(111) and Ge(111) single crystals upon bombardment with low-energy ions

Umirzakov, B. E.; Bekpulatov, I. R.; Imanova, G. T.; Turapov, I. Kh.; Jumaev, J. M.

doi:10.32523/ejpfm.2023070405

Eurasian j. phys. funct. mater.

2023

DOI: 10.32523/ejpfm.2023070405

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Study of the dependence of the degree of disordering of the surface layers of Si(111) and Ge(111) single crystals upon bombardment with low-energy ions

B. E. Umirzakov,

I. R. Bekpulatov,

G. T. Imanova

et al.

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Study of the dependence of the degree of disordering of the surface layers of Si(111) and Ge(111) single crystals upon bombardment with low-energy ions

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References 19 publications

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