Study of the Density of States Distribution in the SiO2/Si Structure

Jurečka, Stanislav; Jamnický, I.

doi:10.26552/com.c.2010.2.58-61

Komunikácie

2010

DOI: 10.26552/com.c.2010.2.58-61

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Study of the Density of States Distribution in the SiO2/Si Structure

Stanislav Jurečka¹,

I. Jamnický²

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Cited by 2 publications

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Study of density of interface states in MOS structure with ultrathin NAOS oxide

et al. 2011

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Ê Ú ¼½ ÖÙ ÖÝ ¾¼½½ ÔØ ½¼ ÇØÓ Ö ¾¼½½ ×ØÖ ØThe quality of the interface region in a semiconductor device and the density of interface states (DOS) play important roles and become critical for the quality of the whole device containing ultrathin oxide films. In the present study the metal-oxide-semiconductor (MOS) structures with ultrathin SiO 2 layer were prepared on Si(100) substrates by using a low temperature nitric acid oxidation of silicon (NAOS) method. Carrier confinement in the structure produces the space quantization effect important for localization of carriers in the structure and determination of the capacitance. We determined the DOS by using the theoretical capacitance of the MOS structure computed by the quantum mechanical approach. The development of the density of SiO 2 /Si interface states was analyzed by theoretical modeling of the C-V curves, based on the superposition of theoretical capacitance without interface states and additional capacitance corresponding to the charges trapped by the interface states. The development of the DOS distribution with the passivation procedures can be determined by this method.

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Study of density of interface states in MOS structure with ultrathin NAOS oxide

et al. 2011

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On Some Ambiguities of the Absorption Edge and Optical Band Gaps of Amorphous and Polycrystalline Semiconductors

Müllerová¹,

Šutta²

2017

Komunikácie

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Study of the Density of States Distribution in the SiO2/Si Structure

Cited by 2 publications

References 6 publications

Study of density of interface states in MOS structure with ultrathin NAOS oxide

Study of density of interface states in MOS structure with ultrathin NAOS oxide

On Some Ambiguities of the Absorption Edge and Optical Band Gaps of Amorphous and Polycrystalline Semiconductors

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