Study of the Decomposition and Phase Transition of Uranium Nitride under UHV Conditions via TDS, XRD, SEM, and XPS

Wang, Xiaofang; Zhong, Ling; Ren, Bin; Yang, Ruilong; Pan, Qifa; Li, Fangfang; Luo, Lijie; Hu, Yin; Liu, Kezhao

doi:10.1021/acs.inorgchem.6b01260

Cited by 16 publications

(14 citation statements)

References 34 publications

(68 reference statements)

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“…XPS of the U-4f valence states in the [0 0 1] U 2 N 3 sample yielded results similar to those seen by Long et al, Wang et al, and Black et al [8,9,11]. The U-4f 7/2 peak is found to be at 377.7 eV, 0.5 eV higher than in UN, and is fitted with an asymmetric peak at this energy, p1, and a symmetric peak at 379.2 eV, p2, which is consistent with the analysis of Wang et al.…”

Section: Discussionsupporting

confidence: 83%

“…Spectra of the U-4f states collected from the UN sample shows sharp asymmetric peaks at higher binding energy than U metal but lower than U 2 N 3 , which is comparable to the spectra of Norton et al, Long et al, Black et al, and Wang et al [8,9,11,29]. This is indicative of the itinerant nature of the system, as described by Fujimori et al [30].…”

Section: Discussionsupporting

confidence: 82%

“…A better understanding of this oxidation process, as well as fundamental fuel properties, such as thermal conductivity and irradiation performance, is required for UN to be considered as a viable accident tolerant fuel (ATF). Consequently, this area of research has had a renewal of interest, with several recent experiments utilising thin film samples [8,9,10].…”

Section: Introductionmentioning

confidence: 99%

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Epitaxial UN and α-U2N3 thin films

et al. 2018

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Single crystal epitaxial thin films of UN and α-U 2 N 3 have been grown for the first time by reactive DC magnetron sputtering. These films provide ideal samples for fundamental research into the potential accident tolerant fuel, UN, and U 2 N 3 , its intermediate oxidation product. Films were characterised using x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS), with XRD analysis showing both thin films to be [001] oriented and composed of a single domain. The specular lattice parameters of the UN and U 2 N 3 films were found to be 4.895Å and 10.72Å, respectively, with the UN film having a miscut of 2.6 •. XPS showed significant differences in the N-1s peak between the two films, with area analysis showing both films to be stoichiometric.

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Section: Discussionsupporting

confidence: 83%

Section: Discussionsupporting

confidence: 82%

Section: Introductionmentioning

confidence: 99%

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Epitaxial UN and α-U2N3 thin films

et al. 2018

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“…XPS of the U-4f valence states in the [0 0 1] U 2 N 3 sample yielded results similar to those seen by Long et al, Wang et al,and Black et al [8,9,11]. The U-4f 7/2 is peak found to be at 377.7 eV, 0.5 eV higher than in UN, and is fitted with an asymmetric peak at this energy, p1, and a symmetric peak at 379.2 eV, p2, which is consistent with the analysis of Wang et al.…”

Section: Discussionsupporting

confidence: 83%

Epitaxial UN and $α$-U$_2$N$_3$ Thin Films

Bright¹,

Rennie²,

Cattelan³

et al. 2018

Preprint

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Single crystal epitaxial thin films of UN and U2N3 have been grown for the first time by reactive DC magnetron sputtering. These films provide ideal samples for fundamental research into the potential accident tolerant fuel, UN, and U2N3, its intermediate oxidation product. Films were characterised using x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS), with XRD analysis showing both thin films to be [001] oriented and composed of a single domain. The specular lattice parameters of the UN and U2N3 films were found to be 4.895 Å and 10.72 Å, respectively, with the UN film having a miscut of 2.6 • . XPS showed significant differences in the N-1s peak between the two films, with area analysis showing both films to be stoichiometric.

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“…Although thin films of UN have been produced before [11][12][13][14][15][16], they have not been epitaxial but in the best case have been strongly textured [12]. As reported in Ref.…”

Section: Sample Preparation and Experimental Proceduresmentioning

confidence: 94%

Synchrotron x-ray scattering of magnetic and electronic structure of UN and U2N3 epitaxial films

et al. 2019

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We examine the magnetic ordering of UN and of a closely related nitride, U 2 N 3 , by preparing thin epitaxial films and using synchrotron x-ray techniques. The magnetic configuration and subsequent coupling to the lattice are key features of the electronic structure. The well-known antiferromagnetic (AF) ordering of UN is confirmed, but the expected accompanying distortion at T N is not observed. Instead, we propose that the strong magnetoelastic interaction below T N causes substantial changes in the strain in the sample being measured. These strains vary as a function of the sample form. As a consequence, the accepted AF configuration of UN may be incorrect. In the case of cubic α-U 2 N 3 , no single crystals have been previously prepared, and we have determined the AF ordering wave vector. The AF T N is close to that previously reported. In addition, resonant diffraction methods have identified an aspherical quadrupolar charge contribution in U 2 N 3 involving the 5 f electrons.

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Study of the Decomposition and Phase Transition of Uranium Nitride under UHV Conditions via TDS, XRD, SEM, and XPS

Cited by 16 publications

References 34 publications

Epitaxial UN and α-U2N3 thin films

Epitaxial UN and α-U2N3 thin films

Epitaxial UN and $α$-U$_2$N$_3$ Thin Films

Synchrotron x-ray scattering of magnetic and electronic structure of UN and U2N3 epitaxial films

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