2009
DOI: 10.1016/j.apsusc.2009.07.024
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Study of temperature rise during focused Ga ion beam irradiation using nanothermo-probe

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Cited by 40 publications
(30 citation statements)
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“…However, it must be noted that all these experiments were carried out with TEM sample preparation apparatus with a beam size that is assumed to be smaller than that of the broad milling system used in this study. In fact, the temperature is closely related to the dose per area that a surface receives and a temperature rise of approximately 1000°C was measured immediately after irradiation of an SiO 2 substrate with a highly energetic Ga + focused ion beam (Shukla et al, 2009). Because the irradiated surface is of the order of 80 mm² with the specific geometry used in our set-up, the power per surface unit was decreased and the surface heating was thus reduced.…”
Section: Ion Beam Etchingmentioning
confidence: 99%
“…However, it must be noted that all these experiments were carried out with TEM sample preparation apparatus with a beam size that is assumed to be smaller than that of the broad milling system used in this study. In fact, the temperature is closely related to the dose per area that a surface receives and a temperature rise of approximately 1000°C was measured immediately after irradiation of an SiO 2 substrate with a highly energetic Ga + focused ion beam (Shukla et al, 2009). Because the irradiated surface is of the order of 80 mm² with the specific geometry used in our set-up, the power per surface unit was decreased and the surface heating was thus reduced.…”
Section: Ion Beam Etchingmentioning
confidence: 99%
“…After most of the thinning was completed with 30 keV Ga+ ions, a standard “low‐keV clean” was performed with 2 keV Ga+ ions to reduce the final damage layer thickness to that expected to be generally insignificant. Ion beam currents were reduced as the TEM sample was thinned to avoid energy‐transfer rates that could raise temperatures within the remaining thickness of material …”
Section: Methodsmentioning
confidence: 99%
“…The conventional acceleration voltages (16-30kV), currents (�2.5 nA) that are used to successfully shape specimens from metallic materials can lead to amorphization, chemical degradation and formation of structural defects within organic specimens [11][12][13]. Additionally, the temperature increase on the sample surface induced by ion milling may also adversely affect the microstructure and consequently the properties of different type of materials [13][14][15].…”
Section: Introductionmentioning
confidence: 99%