Study of Te aggregation at the initial growth stage of CdZnTe films deposited by CSS

Abstract

Te aggregation at the initial growth stage of CdZnTe films deposited by close-spaced sublimation (CSS) is studied with the combination of energy dispersive spectroscopy (EDS) and high resolution transmission electron microscopy (TEM). Te atoms aggregate in the form of Terich amorphous layers, and then these layers grow into stoichiometric and crystalline compounds through interdiffusion as the films thickened. Te aggregation is led by the high dissociation energy of Te-Te bond and the less volatile nature of Te 2 molecules than Cd and Zn molecules absorbed on the substrate.

Formation and evolution of the unexpected PbI2 phase at the interface during the growth of evaporated perovskite films

“…This case is very similar to the growth of CdTe or CdZnTe films prepared by vapor-based deposition methods, where the unexpected Te aggregation at the initial growth stage can be reduced during the further film growth. 5,6 The same behavior also holds true for pedot/ITO, Si and glass substrates, as evidenced by XRD results shown in Fig. S5 (ESI †).…”

“…For the CdTe or CdZnTe films prepared by vapor-based deposition methods, the unexpected Te aggregation during the initial growth stage is widely studied which may deteriorate the device performance. 5,6 Organometal halide perovskites have recently become the most competitive candidates for application in optoelectronics devices like solar cell, light emitting devices and detectors due to their excellent absorption and transport properties and simple processing technique. 7,8 For the interface study, most efforts are devoted to interface engineering by modifying the interface layer using PCBM, C 60 , MgO etc., in order to improve the charge extraction or to decrease the charge recombination at the interface.…”