Study of Surface Passivation and Charge Transport Barriers in DASH Solar Cell

Vijayan, Ramachandran Ammapet; Masilamani, S.; Kailasam, Shanmugam; Kumar, Sudhir; Balamurugan, D.; Varadharajaperumal, Muthubalan

doi:10.1109/jphotov.2019.2926624

Cited by 11 publications

(11 citation statements)

References 28 publications

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“…High W F of these materials can induce a large hole concentration at the interface, which increases the hole conductivity and reduces the electron conductivity, thereby increasing V oc . From theoretical calculations, a sufficiently high W F (>5.5 eV) can guarantee that at the contact interface, the induced field‐effect passivation is good enough to reduce the surface recombination and achieve the optimal V oc without the consideration of chemical passivation 72 . Nevertheless, in practical experiments, the W F of these materials can barely meet the above requirement because oxygen vacancies can easily form which reduce W F during the fabrication processes such as annealing, doping, or deposition 57,61,157–160 .…”

Section: Performance Optimization Of Dopant‐free Passivating Contact ...mentioning

confidence: 99%

“…Whereas the TAT mechanism dominates if TMO has a little lower E C than E V of c-Si, with the help of the abundant traps present near the contact interface (Figure 2D). [70][71][72] Messmer et al studied four different trap situations and found that the TAT transport is highly dependent on the trap density and distributions in the forbidden energy band of TMO. 73 A lower trap density in TMO demands a higher W F (ideally >5.2 eV) to facilitate TAT transport and obtain the maximum cell efficiency.…”

Section: Energy Band and Carrier Transport Processmentioning

confidence: 99%

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Dopant‐free passivating contacts for crystalline silicon solar cells: Progress and prospects

Wang

Zhang

et al. 2022

EcoMat

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The evolution of the contact scheme has driven the technology revolution of crystalline silicon (c-Si) solar cells. The state-of-the-art high-efficiency c-Si solar cells such as silicon heterojunction (SHJ) and tunnel oxide passivated contact (TOPCon) solar cells are featured with passivating contacts based on doped Si thin films, which induce parasitic optical absorption loss and require capitalintensive deposition processes involving flammable and toxic gasses. A promising solution to tackle this problem is to employ dopant-free passivating contact, involving the use of transparent and cost-effective wide band gap materials. In this review, we first introduce the dopant-free passivating contact, from carrier transport mechanisms, material classification to evaluation methods. Then we focus on the advances in different strategies to improve cell performance, including material property optimization, structural and interfacial engineering, as well as various post-treatments. At the end, the challenge and perspective of dopant-free passivating contact c-Si solar cells are discussed.

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Section: Performance Optimization Of Dopant‐free Passivating Contact ...mentioning

confidence: 99%

Section: Energy Band and Carrier Transport Processmentioning

confidence: 99%

Dopant‐free passivating contacts for crystalline silicon solar cells: Progress and prospects

Wang

Zhang

et al. 2022

EcoMat

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“…Also, the low band bending hinders holes transport and increase the device resistance. However, in the case of higher MoO x WF (>6 eV), the carrier transport at the MoO x /c-Si interface happens through band-to-band tunnelling [10,11]. Also, a large hole concentration is induced at the interface, which inverts the charges' polarity at the c-Si surface.…”

Section: Effect Of X Work Function On Front Contact Of Cell Performancementioning

confidence: 99%

“…CSC solar cells rely on wide-bandgap transition metal oxides (TMOs) for charge carrier extraction, where high work function (WF) materials such as molybdenum oxide (MoO x ), vanadium oxide (V 2 O x ) and tungsten oxide (WO x ) are employed as holeselective layers [3,5], and low WF materials such as lithium uoride (LiF x ), magnesium uoride (MgF x ), and titanium oxide (TiO x ) are used as electrons-selective layers [6][7][8]. The carrier selectivity in CSC cells happens through asymmetric energy band alignment of different TMOs with the c-Si; the difference in WF between TMOs and c-Si produces both extraction of charge carriers and eld-effect surface passivation [9,10].…”

Section: Introductionmentioning

confidence: 99%

“…Apart from experimental effort, the modelling and simulation study has been carried out on CSC solar cells to visualize the role of interface and bulk defect states on carrier recombination and transport mechanisms (band to band or trap-assisted tunnelling) [9,11,12]. However, a few research reports on the role of back (electron-selective) contact of CSC cells, Vijayan et al [10] have observed an improvement in surface passivation and electron selectivity from TiO x layer along with LiF x /Al stack by using Sentaurus device simulator. LiF x alone has also been used as an electron-selective layer due to its simple fabrication process to produce a low resistive path to electrons collection at the rear side of the CSC cell as LiF x /Al stack [6].…”

Section: Introductionmentioning

confidence: 99%

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Numerical simulations of carrier-selective contact silicon solar cells: Role of carrier-selective layers electronic properties

Singh

Komarala

2021

J Comput Electron

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Ag/ITO/MoO x /n-Si/LiF x /Al carrier-selective contact (CSC) solar cell structures are modelled and numerically simulated based on the experimental data using an industrial quality base silicon wafer by the Sentaurus TCAD software. The role of (1) electron-selective lithium uoride (LiF x ) layer and its thickness, ( 2) hole-selective molybdenum oxide (MoO x ) work function variation, and (3) front contact (MoO x /n-Si) surface passivation interlayer are explored on the device performance. The electron-selective LiF x layer at the rear side is led to the strong enhancement in device photocurrent by providing the electrical barrier to the minority carriers (holes) and slight improvement in open-circuit voltage, but the thickness of the layer is sensitive to e cient extraction of the majority carriers (electrons). The holeselective MoO x layer work function needs to engineer for inducing the strong inversion layer with better built-in potential at the MoO x /n-Si junction to achieve high open-circuit voltage from a cell. A thin SiO x interlayer at the MoO x /n-Si junction has enhanced the device open-circuit voltage signi cantly by minimizing the minority carrier recombination at the interface.

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Low Oxygen Content MoO_x and SiO_x Tunnel Layer Based Heterocontacts for Efficient and Stable Crystalline Silicon Solar Cells Approaching 22% Efficiency

Li,

Kang,

Wang

et al. 2023

Adv Funct Materials

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In crystalline silicon (c‐Si) solar cells, the hole transport layer (HTL) made of high oxygen content MoOx (x > 2.85, H‐MoOx) evaporating from molybdenum trioxide is not ideal due to low optical bandgap and interface reaction effects. This limits the power conversion efficiency (PCE) and stability of c‐Si solar cells. To improve this, low oxygen content MoOx (x < 2.85, L‐MoOx) with a wide bandgap of 3.87 eV, deposited using molybdenum dioxide (MoO2), is explored and implemented. The c‐Si/SiOx (FGA, forming gas annealing)/L‐MoOx heterojunction has a low contact resistivity of ≈15.06 mΩ cm2, which is almost one order of magnitude lower than that of c‐Si/SiOx(FGA)/H‐MoOx heterojunction. Using L‐MoOx as the HTL, a c‐Si solar cell based on the SiOx passivation layer shows a fill factor of 84.38% and PCE of 21.75%, representing the highest efficiency for MoOx‐based p‐type c‐Si solar cells. Scanning transmission electron microscopy results show that the L‐MoOx HTL effectively enhances the stability of c‐Si solar cells when exposed to air by reducing Ag and Si element diffusion into MoOx. This successful preparation of efficient and stable MoOx HTL films, while preserving their field‐effect passivation ability, provides valuable insights into the development of high‐performance HTL.

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Study of Surface Passivation and Charge Transport Barriers in DASH Solar Cell

Cited by 11 publications

References 28 publications

Dopant‐free passivating contacts for crystalline silicon solar cells: Progress and prospects

Dopant‐free passivating contacts for crystalline silicon solar cells: Progress and prospects

Numerical simulations of carrier-selective contact silicon solar cells: Role of carrier-selective layers electronic properties

Low Oxygen Content MoO_x and SiO_x Tunnel Layer Based Heterocontacts for Efficient and Stable Crystalline Silicon Solar Cells Approaching 22% Efficiency

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Study of Surface Passivation and Charge Transport Barriers in DASH Solar Cell

Cited by 11 publications

References 28 publications

Dopant‐free passivating contacts for crystalline silicon solar cells: Progress and prospects

Dopant‐free passivating contacts for crystalline silicon solar cells: Progress and prospects

Numerical simulations of carrier-selective contact silicon solar cells: Role of carrier-selective layers electronic properties

Low Oxygen Content MoOx and SiOx Tunnel Layer Based Heterocontacts for Efficient and Stable Crystalline Silicon Solar Cells Approaching 22% Efficiency

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Product

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Low Oxygen Content MoO_x and SiO_x Tunnel Layer Based Heterocontacts for Efficient and Stable Crystalline Silicon Solar Cells Approaching 22% Efficiency