Study of strained-silicon channel metal–oxide–semiconductor field effect transistors by large angle convergent-beam electron diffraction

Observing and measuring strain in nanostructures and devices with transmission electron microscopy

“…21 -24 In addition, large-angle CBED is a useful technique to visualize strain in a sample and can even be used quantitatively in certain cases, as demonstrated in Figure 2 . 25…”

Investigation of Strain and Thin Film Relaxation in Ge<i>_x</i>Si_1&minus;<i>_x</i>/Si Strained-Layer Superlattice by Dark-Field Electron Holography

“…Since the higher-order Laue zone (HOLZ) line is very sensitive to the local lattice parameters of the specimen, convergent-beam electron diffraction (CBED) 5) has been widely used to determine the local strain point-by-point with a spatial resolution of 510 nm. 6) Defocused CBED including large-angle convergent-beam electron diffraction (LACBED) with a shadow image of the specimen superimposed can provide more information on the local strain. 7,8) Various methods based on high-resolution electron microscopy (HREM) combined with image processing have been found to be highly efficient for strain mapping at the nanometer level.…”