Study of strained-Si p-channel MOSFETs with HfO2 gate dielectric

Pradhan, D.; Das, Sanghamitra; Dash, T. P.

doi:10.1016/j.spmi.2016.08.019

Cited by 17 publications

(7 citation statements)

References 5 publications

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“…In this case, the interfaces of HfO 2 is related with the Fermi energy level to control and amplify the electric signal or voltage from minimum conduction band (MCB) or maximum valence band (MVB) in devices, and metals body is the driving chair to operate the full procedure. Having some good user friendly properties of HfO 2 , there are some drawbacks, such as crystalline life time, wide band gap, Low-frequency noise [8], γ-ray irradiation in uence [9], lattice parameter [10], and gate dielectric function [11,12]. As a result, in the principle of interface overlapping, the Si and non-Si substrates (e.g., Ge, and Sn) are added as doping to determine their opto-electronic properties developing the useable capacity in RRAM, ferromagnetic devices [2,13], the dielectric thin lms [14], band-edge CMOS applications [15].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Electronic Structure, Optical Properties, Molecular Electrostatic Potential maps (EPM) and Aquatic toxicity of HfO2, Hf0.88Si0.12O2, Hf0.88Ge0.12O2 and Hf0.88Sn0.12O2 by computational methods

Chakma

Kumer

Hossain

et al. 2022

Preprint

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This research work conveys the computationally investigation of Hafnium (IV) oxide and its doped crystals by Si, Ge and Sn atom replacing on the oxygen atom in HfO2. As Hafnium (IV) oxide has been used in power-electronics devices of MOSFETs and electronics as RRAM due to wide band gap which makes a vast problems creating high resistance. Regarding this case, the Hafnium (IV) oxide has selected and inputs how the band gap has reduced after doping the large surface area of atoms, such as Si, Ge and Sn. The lattice parameters and bandgaps were calculated with the Perdew-Burke-Ernzerhof (PBE), Revised Perdew-Burke-Ernzerhof (RPBE), Perdew Wang (PW91), Wu-Cohen (WC), and Perdew-BurkeErnzerhof for solids (PBEsol) non-local functionals of the generalized gradient approximations (GAA). The Perdew-Burke-Ernzerhof (PBE) functional provided better result which is similar to the reference value of mother crystal, HfO2. This first principle method in view of density functional theory (DFT) focuses the structural geometry, electronic structure and optical properties employing conventional calculations pertaining to HfO2 executing the computational tools of the CASTAP code from material studio 8.0. The band gap was recorded by 4.340 eV, 2.033 eV, 1.686 eV and 3.210 eV for HfO2, Hf0.88Si0.12O2 Hf0.88Ge0.12O2 and Hf0.88Sn0.12O2 crystals through the Generalized Gradient Approximation (GGA) with Perdew Burke Ernzerhof (PBE). Secondly, it had also justified doing further investigations by GGA with RPBE, GGA with PW91, GGA with WC and GGA with PBESOL, the band gap for HfO2, Hf0.88Si0.12O2, Hf0.88Ge0.12O2 and Hf0.88Sn0.12O2 were at 4.427 eV, 2.093 eV, 1.744 eV, and 3.262 eV, respectively using GGA with WC, 4.333 eV, 2.032 eV, 1.675 eV and 3.172 eV, respectively using GGA with PW91, 4.252 eV, 2.002 eV, 1.632eV and 3.086 eV, respectively using GGA with WC 4.245 eV, 2.001 eV, 1.629 eV, and 3.076 eV, respectively using GGA with PBESOL. Moreover the DFT and PDOS were simulated for evaluating the nature of 6s2, 5p6, 4f14, 5d2 orbital for a Hf atom, 3s2, 2p6 orbital for Si atom, and 4s2, 3p6, 3d10 orbital for Ge atom, 4d10, 5s2, 5p2 for Sn atom and 2s and 2p orbital for O atom of Hf0.88Ge0.12O2 and Hf0.88Sn0.12O2 crystals. The optical properties, for instance, absorption, reflection, refractive index, conductivity, dielectric function, loss function, electrostatic potential map and aquatic toxicity were calculated.

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Section: Introductionmentioning

confidence: 99%

Investigation of Electronic Structure, Optical Properties, Molecular Electrostatic Potential maps (EPM) and Aquatic toxicity of HfO2, Hf0.88Si0.12O2, Hf0.88Ge0.12O2 and Hf0.88Sn0.12O2 by computational methods

Chakma

Kumer

Hossain

et al. 2022

Preprint

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“…Due to wide band gap and high refractive index, HfO 2 films have been employed in high reflectivity mirrors, anti-reflection coatings, filters and beam splitters [4][5][6][7]. Because of a high dielectric constant, HfO 2 thin films can replace the SiO 2 gate insulating layers in Si and GaAs-based MOSFETs [8,9]. Hafnia nanoparticles can be synthesized by a series of techniques such as ball milling [10], sonochemical approach [11], precipitation method [12] and sol gel method [13].…”

Section: Introductionmentioning

confidence: 99%

Enhanced room temperature sensitivity of undoped HfO2 nanoparticles towards formaldehyde gas

Chattopadhyay

Nayak

2021

Appl. Phys. A

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Hafnium oxide (HfO 2 ) nanoparticulate powders were synthesized via a single step sol gel route using citric acid and ethylene glycol as chelating agent and polymerizing agent, respectively. In order to burn off the volatile components and produce crystalline HfO 2 nanoparticles, the powders were calcined at moderately high temperatures ranging from 500 to 800 °C for 1 h each. The crystal structures of the nanoparticles were ascertained by powder X-ray diffraction. The nanocrystals in powder form had monoclinic structure and preferred orientation of the nanocrystals along (−111) direction was evident. The morphologies of the HfO 2 nanopowders were studied by Field Emission Scanning Electron Microscope (FESEM). Morphologies of the nanopowder were observed to change with calcination temperatures. The optical properties of the HfO 2 nanoparticles were evaluated by UV-Vis Diffuse Reflectance Spectroscopy (DRS). A small change in the band gap energy of HfO 2 nanoparticles was observed with a change in the calcination temperature. In order to study the electrical and gas sensing properties of HfO 2 nanoparticles, the powders were pressed into pellets with 12.0 mm diameter and 1.5 mm thickness. Gas sensing properties of HfO 2 pellets were investigated by exposing them to formaldehyde gas inside closed chambers. The sensitivity of HfO 2 towards formaldehyde gas initially increased with an increase in the calcination temperature due to increased porosity and decreased resistance of the HfO 2 pellet. The HfO 2 powder calcined at 700 °C showed highest sensitivity of 91.2% towards 264 ppm formaldehyde gas. The sensitivity declined with further increase in the calcination temperature because the HfO 2 pellet became less porous thereby. Selectivity of the HfO 2 sensor was tested with three volatile organic compound gases: acetone, ethanol and formaldehyde. Highest response was recorded for the formaldehyde gas.

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“…1,2 Alternatively, more efforts have been devoted to seek for materials, which are physically thicker than SiO 2 yet are able to yield high-performance MOS devices at a low leakage current. Among the alternative materials that have been suggested as the substitutes for SiO 2 are those offering dielectric constant (k) values larger than SiO 2 for Si-based MOS devices that include aluminum oxide, 3 yttrium oxide, 1 zirconium oxide, 4 lanthanum oxide, 5 hafnium oxide, 6 cerium oxide, 7 and tantalum oxide. 8,9 A broader attention has been placed particularly on tantalum oxide (Ta 2 O 5 ) due to its wide deployment as a storage dielectric film, 9 owing to its high storage capability in comparison to other high k materials.…”

Section: Introductionmentioning

confidence: 99%

Exploratory studies on wet oxidation grown ternary hafnium tantalum oxide for metal‐oxide semiconductor application

Lim

Quah

2021

Intl J of Energy Research

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Ternary hafnium-doped tantalum oxide (Hf x Ta y O z ) films were successfully obtained after wet oxidation at different temperatures (400-1000 C). A phase transformation from amorphous to crystalline Hf x Ta y O z phases as well as film densification process happened with respect to temperature until 800 C. However, at temperature beyond 800 C, an increase of the thickness was attained as a consequence of film growth and interfacial layer formation. Besides, additional phenomena allied with nitridation and passivation have also happened in the samples. However, formation of N-H complex would decrease the nitridation and passivation due to a reduction of nitrogen and H 2 available at the interface to retard interfacial layer formation as well as minimizing density, effective oxide charges, and slow trap density demonstrated by Hf x Ta y O z for a functional MOS capacitor were investigated.

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Study of strained-Si p-channel MOSFETs with HfO2 gate dielectric

Cited by 17 publications

References 5 publications

Investigation of Electronic Structure, Optical Properties, Molecular Electrostatic Potential maps (EPM) and Aquatic toxicity of HfO2, Hf0.88Si0.12O2, Hf0.88Ge0.12O2 and Hf0.88Sn0.12O2 by computational methods

Investigation of Electronic Structure, Optical Properties, Molecular Electrostatic Potential maps (EPM) and Aquatic toxicity of HfO2, Hf0.88Si0.12O2, Hf0.88Ge0.12O2 and Hf0.88Sn0.12O2 by computational methods

Enhanced room temperature sensitivity of undoped HfO2 nanoparticles towards formaldehyde gas

Exploratory studies on wet oxidation grown ternary hafnium tantalum oxide for metal‐oxide semiconductor application

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