Study of Spin Transfer Torque (STT) and Spin Orbit Torque (SOT) Magnetic Tunnel Junctions (MTJS) at Advanced CMOS  Technology Nodes

Jabeur, Kotb; Pendina, Grégory Di; Prenat, Guillaume

doi:10.14810/elelij.2017.6101

Cited by 8 publications

(6 citation statements)

References 13 publications

(16 reference statements)

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“…Thus, the use of voltage can lead to significant energy saving with an important cost reduction (ultra-low power ME devices). Table V lists the energy needed to write a single bit of information in the different types of existing memories [464,465]. Looking at the Table, volatile SRAM and DRAM memories seem to be amongst the most energy efficient.…”

Section: Magnetoelectric Random-access Memories (Me-rams)mentioning

confidence: 99%

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Roadmap on Magnetoelectric Materials and Devices

et al. 2021

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The possibility to tune the magnetic properties of materials with voltage (converse magnetoelectricity) or to generate electric voltage with magnetic fields (direct magnetoelectricity) has opened new avenues in a large variety of technological fields, ranging from information technologies to healthcare devices and including a great number of multifunctional integrated systems such as mechanical antennas, magnetometers, radiofrequency (RF) tunable inductors, etc., which have been realized due to the strong strainmediated magnetoelectric (ME) coupling found in ME composites. The development of singlephase multiferroic materials (which exhibit simultaneous ferroelectric and ferromagnetic or antiferromagnetic orders), multiferroic heterostructures, as well as progress in other ME mechanisms, such as electrostatic surface charging or magneto-ionics (voltage-driven ion migration) have a large potential to boost energy efficiency in spintronics and magnetic actuators. This paper focuses on existing ME materials and devices and reviews the state of the art in their

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Section: Magnetoelectric Random-access Memories (Me-rams)mentioning

confidence: 99%

“…As evidenced in Table V, these energies represent several orders of magnitude lower than those required to write data bits in other types of non-volatile memories. [84,[464][465][466][467]. For HDD, the energy dissipated by rotation of the disk and the movement of the read/write arm is also included.…”

Section: Magnetoelectric Random-access Memories (Me-rams)mentioning

confidence: 99%

Roadmap on Magnetoelectric Materials and Devices

et al. 2021

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“…Their exceptional magnetic properties, which include high saturation magnetization and spin polarization, has resulted in the emergence of spin-transfer torque magnetic randomaccess memory (STT-MRAM) and spin-orbit torque magnetic random-access memory (SOT-MRAM) devices [7][8][9][10][11]. These devices feature a magnetic tunnel junction (MTJ) structure that is composed of a thin oxide tunnel layer positioned between two ferromagnetic metal layers [12][13][14]. Owing to their non-volatility and high-performance information storage characteristics, STT-MRAM and SOT-MRAM have garnered attention as promising candidates for next-generation memory technologies [14,15].…”

Section: Introductionmentioning

confidence: 99%

Effects of Buffer and Capping Layers on Thermal Stability of CoFeB/MgO Frames at Various Temperatures

Kang,

Hwang,

Kim

et al. 2024

Applied Sciences

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The utilization of CoFeB thin films in spintronic devices has attracted significant attention due to their exceptional magnetic properties, which include high saturation magnetization and spin polarization. However, the effect of ambient temperature on the magnetic properties of CoFeB/MgO frames, particularly those with different buffer and capping layers, remains unexplored. Therefore, in this study, the magnetostatic and dynamic properties of CoFeB/MgO frames were investigated at various temperatures. Using vibrating sample magnetometry and ferromagnetic resonance spectroscopy, changes in key parameters such as saturation magnetization, the Gilbert damping constant, magnetic anisotropy field, in-plane uniaxial magnetic anisotropy energy, and thermal stability factor were investigated. Furthermore, the thermal stabilities of CoFeB/MgO frames with Ta buffer and capping layers were compared with those of CoFeB/MgO frames with W buffer and capping layers by examining the changes in the key parameters at various temperatures. These results reveal that the thermal stability of the latter surpassed that of the former. This study provides significant insights for the development of thermally robust spintronic devices capable of operating above room temperature.

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“…The application of a field has the downside of increasing the power consumption of the device and it might affect the magnetisation of the MTJ itself or nearby cells. Nonetheless, SOT-MRAMs are characterised by a slightly lower power consumption than STT-MRAM 16 , 17 . SOT-MRAM is a three terminal device in which the writing and reading paths are separated: the writing current is injected into the metallic contact and does not flow across the MTJ, whereas a weak current injected into the MTJ is used to read.…”

Section: Introductionmentioning

confidence: 99%

“…This comes at the cost of larger memory cells than STT-MRAM. Nonetheless, their fast operation, on the sub-nanosecond timescale, make these devices suitable for CPU cache memories 11 , 16 , 17 .…”

Section: Introductionmentioning

confidence: 99%

Magnetisation switching dynamics induced by combination of spin transfer torque and spin orbit torque

Meo

Chureemart

Chantrell

et al. 2022

Sci Rep

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We present a theoretical investigation of the magnetisation reversal process in CoFeB-based magnetic tunnel junctions (MTJs). We perform atomistic spin simulations of magnetisation dynamics induced by combination of spin orbit torque (SOT) and spin transfer torque (STT). Within the model the effect of SOT is introduced as a Slonczewski formalism, whereas the effect of STT is included via a spin accumulation model. We investigate a system of CoFeB/MgO/CoFeB coupled with a heavy metal layer where the charge current is injected into the plane of the heavy metal meanwhile the other charge current flows perpendicular into the MTJ structure. Our results reveal that SOT can assist the precessional switching induced by spin polarised current within a certain range of injected current densities yielding an efficient and fast reversal on the sub-nanosecond timescale. The combination of STT and SOT gives a promising pathway to improve high performance CoFeB-based devices with high speed and low power consumption.

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Study of Spin Transfer Torque (STT) and Spin Orbit Torque (SOT) Magnetic Tunnel Junctions (MTJS) at Advanced CMOS Technology Nodes

Abstract: Magnetic Random Access Memory (MRAM) is a promising candidate to be the universal non-volatile (NV

Cited by 8 publications

References 13 publications

Roadmap on Magnetoelectric Materials and Devices

Roadmap on Magnetoelectric Materials and Devices

Effects of Buffer and Capping Layers on Thermal Stability of CoFeB/MgO Frames at Various Temperatures

Magnetisation switching dynamics induced by combination of spin transfer torque and spin orbit torque

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