Study of Some Properties of PbI2 Deposited on Porous Silicon Using Thermal Evaporation Technique for Many Applications

Abstract

The present work is a study of some properties of PbI2 deposited on porous silicon (n-PSi) by using the thermal evaporation technique. X-ray diffraction, scanning electron microscopy, UV-Vis spectrophotometer, and FTIR analysis were used to characterize the structural, optical, and morphological properties of n-Psi. X-ray diffraction showed that the PbI2 film has a hexagonal polycrystalline structure, while FE-SEM images showed porous silicone in Photoelectrochemical etching, the pore distribution is irregular and the pore refers to the increased surface area of the silicon. SEM images of pbI2 film showed that particles were scattered and resembled gravel in size. The estimated optical energy value of thin films of PbI2 was 2.6 eV. PbI2 film has lower transmittance values at short wavelengths, but as the wavelength increases, the transmittance values gradually increased. The greatest transmittance value was 0.88. From FTIR analysis, chemical bonds were determined between porous silicon and PbI2.