Extreme Ultraviolet (EUV) Lithography IX 2018
DOI: 10.1117/12.2297458
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Study of Sn removal by surface wave plasma for source cleaning (Conference Presentation)

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“…Due to strong interactions between Sn and Ru, SnH 4 can decompose into Sn and H on the Ru surface as experimentally demonstrated in refs 6, 7, and 46 ,, effectively leading to H migration from Sn to Ru. However, we do not find the corresponding energy barrier to compare with E es = 0.44 eV in our model, whereas 0.39 and 0.47 eV are reported in refs and , respectively, for the energy barrier for SnH 4 decomposition on Sn. Furthermore, although DFT studies show that H released by SnH x can penetrate into the Ru subsurface, , there is still lack of computational investigation of lateral H migration from SnH x to RuO 2 or Ru on the surface.…”
Section: Discussionmentioning
confidence: 84%
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“…Due to strong interactions between Sn and Ru, SnH 4 can decompose into Sn and H on the Ru surface as experimentally demonstrated in refs 6, 7, and 46 ,, effectively leading to H migration from Sn to Ru. However, we do not find the corresponding energy barrier to compare with E es = 0.44 eV in our model, whereas 0.39 and 0.47 eV are reported in refs and , respectively, for the energy barrier for SnH 4 decomposition on Sn. Furthermore, although DFT studies show that H released by SnH x can penetrate into the Ru subsurface, , there is still lack of computational investigation of lateral H migration from SnH x to RuO 2 or Ru on the surface.…”
Section: Discussionmentioning
confidence: 84%
“…As mentioned in Section 4, volatile species SnD x could form near the target surface upon exposure to deuterium plasma. Due to strong interactions between Sn and Ru, SnH 4 can decompose into Sn and H on the Ru surface as experimentally demonstrated in refs 6, 7, and 46 6,7,46 effectively leading to H migration from Sn to Ru. However, we do not find the corresponding energy barrier to compare with E es = 0.44 eV in our model, whereas 0.39 and 0.47 eV are reported in refs 45 and 46, respectively, for the energy barrier for SnH 4 decomposition on Sn.…”
Section: Less Than One Atomic Layer Ofmentioning
confidence: 85%