Optical transmissions in metal/insulator (Fe/MgF2) multilayered thin filmsMultilayer Al thin films with interleaving and protective MgF 2 dielectric layers for use as far and extreme ultraviolet reflectors have been characterized using x-ray photoelectron spectroscopy ͑XPS͒ and atomic force microscopy ͑AFM͒. The devices were prepared in a conventional high vacuum system. Sputter depth profiles were obtained using XPS in a separate ultrahigh vacuum system. The MgF 2 layers may contain Mg vacancies, and F appeared to be segregated to the MgF 2 /Al boundaries where it may form AlF 3 . Oxide regions on the Al surfaces are thicker than previously reported from optical measurements and are not pure Al 2 O 3 throughout. The AFM images showed columnar growth of the Al and MgF 2 layers. Root-mean-square roughnesses determined across these surfaces were on the order of at least 1-2 nm. A more comprehensive picture of the composition and morphology of each layer in a multilayer device was obtained from this investigation than typically provided from measurements with optical techniques.