Study of silicon photomultiplier performance in external electric fields

Sun, Xiangming; Tolba, T.; Cao, Guangtao; Lv, Pin; Wen, L.; Odian, A.; Vachon, F.; Alamre, Amal; Albert, J.; Anton, G.; Arnquist, I. J.; Badhrees, I.; Barbeau, P. S.; Beck, D.; Belov, V.; Bhatta, Trilochan; Bourque, F.; Brodsky, J.; Brown, E.; Brunner, T.; Burenkov, A.; Cao, Liqiang; Cen, W. R.; Chambers, Claire; Charlebois, Serge A.; Chiu, M.; Cleveland, B. T.; Coon, Minor J.; Cote, M.; Craycraft, A.; Cree, W.; Dalmasson, J.; Daniels, T.; Darroch, L.; Daugherty, S. J.; Daughhetee, J.; Delaquis, S.; Mesrobian-Kabakian, A. Der; DeVoe, R.; Dilling, J.; Ding, Ying; Dolinski, M. J.; Dragone, A.; Echevers, J.; Fabris, L.; Fairbank, D.; Fairbank, W. M.; Farine, J.; Feyzbakhsh, S.; Fierlinger, P.; Fontaine, R.; Fudenberg, D.; Gallina, G.; Giacomini, G.; Gornea, R.; Gratta, G.; Hansen, E. V.; Harris, D. A.; Heffner, M.; Hoppe, E. W.; Hößl, J.; House, A.; Hufschmidt, P.; Hughes, M.; Ito, Yuta; Iverson, A.; Jamil, A.; Jessiman, C. E.; Jewell, M. J.; Jiang, X. S.; Karelin, A.; Kaufman, L. J.; Kodroff, D.; Koffas, T.; Kravitz, S.; Krücken, R.; Kuchenkov, A.; Kumar, Krishna; Lan, Y.; Larson, A. C.; Leonard, D. S.; Li, G.; Li, S.; Li, Z.; Licciardi, C.; Lin, Yi-Hsuan; MacLellan, R.; Michel, Thilo; Moe, M. K.; Mong, B.; Moore, David C.; Murray, K.; Newby, J.; Ning, Z.; Njoya, O.; Nolet, F.; Nusair, O.; Odgers, K.; Oriunno, M.; Orrell, J. L.; Ortega, G. S.; Ostrovskiy, I.; Overman, C.T.; Parent, Samuel; Piepke, A.; Pocar, A.; Pratte, J.‐F.; Qiu, Delong; Radeka, V.; Raguzin, Е.; Rao, T.; Rescia, S.; Retière, F.; Robinson, A.; Rossignol, T.; Rowson, P. C.; Roy, N.; Saldanha, R.; Sangiorgio, S.; Schmidt, Susann; Schneider, Judith; Sinclair, D.; Skarpaas, K.; Soma, A. K.; St-Hilaire, G.; Stekhanov, V.; Stiegler, T.; Tarka, M.; Todd, J.; Totev, T. I.; Tsang, R.; Tsang, T.; Veenstra, B.; Veeraraghavan, V.; Visser, G.; Vuilleumier, J. L.; Wagenpfeil, M.; Wang, Q.; Watkins, J.; Weber, M.; Wei, W.; Wichoski, U.; Wrede, Gerrit; Wu, Sen; Wu, W.; Xia, Qi; Yang, L.; Yen, Y.-R.; Zeldovich, O.; Zhao, J.; Zhou, Y.; Ziegler, T.

doi:10.1088/1748-0221/13/09/t09006

Cited by 13 publications

(14 citation statements)

References 14 publications

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“…The entire copper cup is enclosed within the inner steel vacuum vessel. The vessel is connected to electrical feedthroughs Stanford 293 TABLE I OVERVIEW OF THE KEY PARAMETERS FOR THE MEASUREMENTS OF THE VARIOUS DEVICES. for signal, bias voltage and the Resistance Temperature Detector (RTD) cables as well as connections to the xenon gas inlet system at the top of the vacuum chamber (9). A turbomolecular pump, realizing a pressure better than 2 × 10 −5 mbar, is also connected from the top.…”

Section: B Erlangen Setupmentioning

confidence: 99%

“…The SiPMs will fully cover the lateral surface of the cylinder with a total photo-sensitive area of about 4 m 2 , as shown in Figure 1. The devices will be immersed in LXe and placed in the high field region behind the field shaping rings of the TPC field cage [9]. The performance of SiPMs has improved significantly over the past decade and they are especially interesting because of their high gain, on the order of 10 6 , and their single photon resolution capability.The half-life sensitivity of nEXO to the 0νββ decay of 136 Xe is projected to be 9.5 × 10 27 yr for 90 % C.L.…”

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confidence: 99%

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VUV-Sensitive Silicon Photomultipliers for Xenon Scintillation Light Detection in nEXO

Jamil

Ziegler

Hufschmidt

et al. 2018

IEEE Trans. Nucl. Sci.

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Future tonne-scale liquefied noble gas detectors depend on efficient light detection in the VUV range. In the past years Silicon Photomultipliers (SiPMs) have emerged as a valid alternative to standard photomultiplier tubes or large area avalanche photodiodes. The next generation double beta decay experiment, nEXO, with a 5 tonne liquid xenon time projection chamber, will use SiPMs for detecting the 175 nm xenon scintillation light, in order to achieve an energy resolution of σ/Qββ = 1 %. This paper presents recent measurements of the VUV-HD generation SiPMs from Fondazione Bruno Kessler in two complementary setups. It includes measurements of the photon detection efficiency with gaseous xenon scintillation light in a vacuum setup and dark measurements in a dry nitrogen gas setup. We report improved photon detection efficiency at 175 nm compared to previous generation devices, that would meet the criteria of nEXO. Furthermore, we present the projected nEXO detector light collection and energy resolution that could be achieved by using these SiPMs. Index Terms-silicon photomultiplier, xenon detectors, photo detectors, vacuum ultra-violet light, nEXO I. NEUTRINO-LESS DOUBLE BETA DECAY AND NEXO N eutrino-less double beta decay (0νββ) is a hypothetical nuclear decay where two neutrons decay into two protons and two electrons are emitted but no anti-neutrinos are present in the final state. The observation of this process would have a fundamental impact on the Standard Model of Particle Physics, specifically showing a violation of lepton number conservation (|∆L| = 2), and would imply that the neutrino is a Majorana fermion [1], independently of the actual process enabling the decay [2]. Furthermore, the half-life of the decay would shed light on the absolute neutrino mass scale [3]. The nEXO collaboration plans to build a cylindrical singlephase time projection chamber (TPC) filled with 5 tonnes of liquid xenon (LXe), with 90 % enrichment in 136 Xe [4]. nEXO takes advantage of the experience from its predecessor EXO-200 [5], but will incorporate new light and charge detectors [6]. Together with cold electronics sitting inside the LXe, this allows nEXO to achieve an energy resolution of σ/Q ββ = 1 % for the 0νββ decay of 136 Xe (2458.07 ± 0.31 keV [7], [8]).In particular, instead of the EXO-200 Large Area Avalanche Photo-diodes (LAAPDs), nEXO will use Silicon Photomultipliers (SiPMs) for the detection of xenon scintillation light. The SiPMs will fully cover the lateral surface of the cylinder with a total photo-sensitive area of about 4 m 2 , as shown in Figure 1. The devices will be immersed in LXe and placed in the high field region behind the field shaping rings of the TPC field cage [9]. The performance of SiPMs has improved significantly over the past decade and they are especially interesting because of their high gain, on the order of 10 6 , and their single photon resolution capability.The half-life sensitivity of nEXO to the 0νββ decay of 136 Xe is projected to be 9.5 × 10 27 yr for 90 % C.L. after 10 years o...

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Section: B Erlangen Setupmentioning

confidence: 99%

mentioning

confidence: 99%

VUV-Sensitive Silicon Photomultipliers for Xenon Scintillation Light Detection in nEXO

Jamil

Ziegler

Hufschmidt

et al. 2018

IEEE Trans. Nucl. Sci.

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“…With the current arrangement of SiPMs in TPC, part of them will be exposed to the high external electrical field, up to 20 kV/cm. The performance of SiPM operating in difference electric field strength has been carefully studied, and the results show no influences on SiPM characterizations [12]. In nEXO, a modular and pad-like charge readout tile is under study.…”

Section: Highlights Of Randd Activities In Nexomentioning

confidence: 99%

Search for $0\nu\beta\beta$ decay with EXO-200 and nEXO

Cao¹,

Exo²,

collaborations³

2018

Proceedings of XIV International Conference on Heavy Quarks and Leptons — PoS(HQL2018)

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The search for neutrinoless double beta decay (0νββ) process becomes a quite hot topic after the establishment of non-zero neutrino mass by oscillation experiments, as the observation of 0νββ process would indicate the discovery of the new physics beyond the standard model. The EXO-200 is a running detector based on liquid xenon TPC, which is the first 100 kg-class experiment producing results and well demonstrating the key technologies in 0νββ search. The most recent 0νββ half-life sensitivity of 136 Xe from EXO-200 has been improved to 3.7 ×10 25 yrs at 90% C.L., by combining the data set collected in phase I and phase II. nEXO experiment is extrapolated from EXO-200, aiming to reach 0νββ half-life sensitivity of 10 28 yrs by using 5 tonne enriched liquid xenon TPC, which can entirely cover the region of inverted hierarchy. Lots of R&D activities in nEXO are being carried out to enhance the TPC performance. In this proceeding, part of them will be highlighted.

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“…Thanks to the rapid evolution of signal processing and light source technologies, the field of light detection has enjoyed spectacular advancements over the last 10 years [1]. Silicon PhotoMultipliers (SiPMs) are an emerging and very promising technology that address the challenge of sensing, timing and quantifying low-light signals down to the single-photon level [2][3][4][5]. For these reasons, large-scale low-background cryogenic experiments, such as the next-generation Enriched Xenon Observatory experiment (nEXO) [6], are migrating to a SiPM-based light detection system [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Characterisation of a new generation of VUV low-light sensors

Gallina

Retière

2020

EPJ Web Conf.

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Silicon Photo-Multipliers (SiPMs) have emerged as a compelling photo-sensor solution over the course of the last decade. In contrast to the widely used Photomultiplier Tubes (PMTs), SiPMs are low-voltage powered, optimal for operation at cryogenic temperatures, and have low radioactivity levels with high gain stability over the time in operational conditions. For these reasons, large-scale low-background cryogenic experiments, such as the nextgeneration Enriched Xenon Observatory experiment (nEXO), are migrating to a SiPM-based light detection system. In this paper we report on the characterization of the Hamamatsu VUV4 (S/N: S13370-6152) Vacuum Ultra-Violet (VUV) sensitive Multi-Pixel Photon Counters (MPPC)s as part of the development of a solution for the detection of liquid xenon scintillation light for the nEXO experiment.

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Study of silicon photomultiplier performance in external electric fields

Cited by 13 publications

References 14 publications

VUV-Sensitive Silicon Photomultipliers for Xenon Scintillation Light Detection in nEXO

VUV-Sensitive Silicon Photomultipliers for Xenon Scintillation Light Detection in nEXO

Search for $0\nu\beta\beta$ decay with EXO-200 and nEXO

Characterisation of a new generation of VUV low-light sensors

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