Study of Silicon Body Thickness and Channel Length on SCEs and Electrical Performances of Underlapped GS-DG-MOSFET

Abstract

In this paper, the investigation is carried out with the variation of silicon body thickness (TSi)

Design and Simulation of Dielectrically Modulated Dual Material Gate-Stack Double-Gate FinFET Biosensor

“…The DM-GS-DG-FinFET structure is considered with dielectric modulated for biomolecule sensing applications in the nanoscale range. 9,16,37 Further, the dielectric constants κ-values of 1, 2, 5, 7, and 12 and charge densities ρ-values of −1 × 10 10 , −5 × 10 11 , and −1 × 10 12 cm −2 are considered to observe the variations in the band bending at the source-channel junction beneath the cavity region. Figures 4a and 4b show the electric field profile of the device DM-GS-DG-FinFET-based biosensor for different κand ρ-values in the ON-state (V GS = 1.0 V and V DS = 1.0 V)…”

“…A gate-stacking structure is preferred to improve the I ON and to obtain a steeper SS. 16,19,20 Among the reported designs, the gate stack offers better immunity toward the interface trap charges and minimum SS. 21,22 The SM-GS-DG 23,24 has been previously studied in the literature, but the underlap region in the structure provides more electrostatic influence over the channel area, improving I ON .…”

“…However, the spacer material may help increase the convergence of the fringing field in the underlap region, improving the analog and RF performances, by overcoming problems, such as V TH pinning, mobility degradation, poor reliability, thermal budget, etc. [13][14][15][16][17][18] The present study describes the device to have been given following the ITRS roadmap. 28 The p + doping concentration is located at the channel region while the n + doping concentration is at the source and drain regions (Fig.…”

“…The literature study indicated that the DM-GS-DG-FinFET 13,14 demonstrated reduced degradation in gate leakage current, DIBL, and process variability due to interface change, improving I ON /I OFF , SS, and DIBL compared to conventional devices. 15,16 This study presents a dielectrically modulated DM-GS-DG-FinFET-based transducer using a nanogap cavity within the gate dielectric region for biomolecule sensing. Accumulation of biomolecules in this nanogap cavity has affected the band diagrams, surface potential, device efficiency, transfer, and output characteristics (electrical, analog, and RF) parameters, all of which are thoroughly investigated in this study.…”