Study of SiF₄-N₂-H₂ Plasmas for the Deposition of Fluorinated Silicon Nitride Films

Abstract

Radiofrequency glow discharges, operating under various conditions, have been used to deposit hydrogenated and fluorinated silicon nitride (a-Si,N:H,F) from SiF4-N 2 -H 2 gas mixtures. The effect of the feeding mixture composition has been investigated in order to establish the optimum deposition conditions for stable silicon nitride. High H2-dilution of the feeding mixture has been found to produce transparent (Eg>5.6eV) and stoichiometric (N/Si=l.3) films.