Study of SiC Epitaxial Growth Using Tetrafluorosilane and Dichlorosilane in Vertical Hotwall CVD Furnace

Balachandran, Anusha; Song, Hai Zheng; Sudarshan, Tangali S.; Shetu, Shamaita S.; Chandrashekhar, M. V. S.

doi:10.4028/www.scientific.net/msf.821-823.137

Cited by 3 publications

(2 citation statements)

References 9 publications

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“…The device structure (Figure a) starts with EG/SiC Schottky diodes created by growing a homoepitaxial layer of n-type 4H-SiC, unintentionally doped to 1.6 × 10 14 cm –3 on a n + -SiC substrate by chemical vapor deposition (CVD) in a hot wall reactor with SiF 4 and propane precursors in a hydrogen atmosphere, as described elsewhere. − Graphene was then formed natively on the previous homoepitaxial layer through exposure to SiF 4 in an Ar atmosphere . EG showed the key Raman peaks at ∼1580, ∼1350, and ∼2650 cm –1 with a D/G ratio of ∼0.1, indicating good quality.…”

Section: Methodsmentioning

confidence: 99%

Photovoltaic and Photoconductive Action Due to PbS Quantum Dots on Graphene/SiC Schottky Diodes from NIR to UV

Kelley

Letton

Simin

et al. 2019

ACS Appl. Electron. Mater.

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We demonstrate photovoltaic and photoconductive responses to near-infrared light in devices formed by depositing a film of gel permeation chromatography purified PbS quantum dots (QDs) on top of n-SiC epitaxial layers with natively grown, low-leakage 10–15 monolayer thick epitaxial graphene (EG) Schottky contacts. The QD film layer was removable by selective chemical etching, resetting the EG/SiC Schottky diode: the sub-bandgap response could be restored in subsequent PbS-QD depositions. The EG in these devices simultaneously forms Schottky contacts to SiC and ohmic contacts to PbS-QD, enabling electrical screening and isolation of these interfaces from each other. After PbS-QD deposition, the diodes exhibit photovoltaic and photoconductive responses at photon energies far below the SiC bandgap, extending to the NIR gap of the QD film. Scanning photocurrent microscopy illustrates that this is due to charge transfer from the QD film to the n-type 4H-SiC through a trap-limited, rectifying PbS-QD/SiC heterojunction with ideality n = 2 in parallel with the EG/SiC Schottky diode. The photoconductive gain at this QD/SiC interface could be useful for IR detection in wide-bandgap platforms. Response times as fast as 40 ms are suitable for imaging applications, although careful contact design is required to optimize work-function matching and spreading resistance.

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Section: Methodsmentioning

confidence: 99%

Photovoltaic and Photoconductive Action Due to PbS Quantum Dots on Graphene/SiC Schottky Diodes from NIR to UV

Kelley

Letton

Simin

et al. 2019

ACS Appl. Electron. Mater.

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“…Thus the surfaces of polypropylene and other materials used for PPEs can be easily oxidized by a simple plasma treatment [45,46] and modified with hybrid SAMs. The selfassembly can be formed by a simple dip coating or a chemical vapour deposition [29,[47][48][49]. In another study, polypropylene (PP) and polytetrafluoroethylene (PTFE) films were functionalized by amine groups in two steps; first grafting of acryloyl chloride (AC) using γ-rays and then chemical coupling between the grafted AC and ethylenediamine (ED) as shown in Figure 4(b) [50,51].…”

Section: Strategies Of the Surface Engineering/ Modificationmentioning

confidence: 99%

Surface engineering of personal protective equipments (PPEs) to prevent the contagious infections of SARS-CoV-2

Pandey

2020

Surface Engineering

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The outermost surfaces of Personal Protective Equipments (PPEs) interact with virus surfaceprotein as the first step during its transmission from aerosols and contacting surfaces, which can be tuned by surface engineering/modification. This report highlights the role of engineered surface chemistry of PPEs to avoid the spreading of the novel SARS-CoV-2 virus in hospitals. Physical properties of surfaces and spike-glycoprotein are correlated with the reported stability of SARS-CoV-2. The spike-protein is reported to be hydrophobic in nature with an isoelectric point of 5.9. Hence surface with both positive charge and hydrophobic groups are expected to achieve a strong binding with the surface spike-protein. Various surface engineering strategies of polypropylene and other materials with hybrid selfassembled monolayers and dopamine are discussed to design the mixed hydrophobic and charged surfaces. The strong surface-protein interactions may lead to severe conformational changes and destabilization of the viral envelope, which can disintegrate and inactivate the novel coronavirus.

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High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor

Chava

Barker

Balachandran

et al. 2017

Applied Physics Letters

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We report the performance of a bipolar epitaxial graphene (EG)/p-SiC/n+-SiC UV phototransistor fabricated with a Schottky (EG)/SiC junction grown using a SiF4 precursor. The phototransistor showed responsivity as high as 25 A/W at 250 nm in the Schottky emitter (SE) mode. The Schottky collector (SC) mode showed a responsivity of 17 A/W at 270 nm with a visible rejection (270 nm:400 nm)>103. The fastest response was seen in the SC-mode, with 10 ms turn-on and 47 ms turn-off, with a noise equivalent power of 2.3 fW at 20 Hz and a specific detectivity of 4.4 × 1013 Jones. The high responsivity is due to internal gain from bipolar action. We observe additional avalanche gain from the device periphery in the SC-mode by scanning photocurrent microscopy but not in the SE-mode. This high-performance visible-blind photodetector is attractive for advanced applications such as flame detection.

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Study of SiC Epitaxial Growth Using Tetrafluorosilane and Dichlorosilane in Vertical Hotwall CVD Furnace

Cited by 3 publications

References 9 publications

Photovoltaic and Photoconductive Action Due to PbS Quantum Dots on Graphene/SiC Schottky Diodes from NIR to UV

Photovoltaic and Photoconductive Action Due to PbS Quantum Dots on Graphene/SiC Schottky Diodes from NIR to UV

Surface engineering of personal protective equipments (PPEs) to prevent the contagious infections of SARS-CoV-2

High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor

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