Study of sense current effect on magnetization switching behavior from anomalous Hall effect in TbFeCo thin films

Sense current dependent coercivity and magnetization relaxation in Gd-Fe-Co Hall bar

“…Therefore, more current shunting is expected for probe A than probe B. Our previous study on MgOcapped TbFeCo (Tb-rich)/Ta bilayer Hall bar device shows a drop in coercivity as well as in anomalous Hall resistivity for an increase in the dc sensing current, which has been explained on behalf of Joule heating and spin-orbit torque (SOT) effects [28]. In addition, the difference in the coercivity and anomalous Hall resistivity behavior on mutually exchanging the current and voltage probes has been attributed to the different current shunting in the Hall bar for different aspect ratios.…”

“…For spintronics application purposes a basic device consists of the Hall bar pattern, which can be used for anomalous Hall effect (AHE), spin Hall switching, spin torques, domain wall velocity, etc., important characteristics [6,26,27]. In the Hall bar device, the effect of sense current on anomalous Hall effect resistivity, coercivity, domain wall propagation, are key factors for the memory and other spintronics applications [28,29]. Furthermore, these characteristics also depend on the shape of the pattern (aspect ratio) [28][29][30].…”

“…In the Hall bar device, the effect of sense current on anomalous Hall effect resistivity, coercivity, domain wall propagation, are key factors for the memory and other spintronics applications [28,29]. Furthermore, these characteristics also depend on the shape of the pattern (aspect ratio) [28][29][30]. In our previous studies, we have investigated the HC, AHE resistivity (ρAHE), and magnetization relaxation behavior as a function of sense current and Hall bar aspect ratios in the TbFeCo [28,29].…”

“…Furthermore, these characteristics also depend on the shape of the pattern (aspect ratio) [28][29][30]. In our previous studies, we have investigated the HC, AHE resistivity (ρAHE), and magnetization relaxation behavior as a function of sense current and Hall bar aspect ratios in the TbFeCo [28,29]. In the present work, we investigate GdFeCo thin film through AHE measurements to find the dependence of HC, ρAHE, and the time-evolution of magnetization on the sense current and Hall bar aspect ratio.…”