Study of selective dry etching Si0.7Ge0.3 with different plasma source in process of gate-all-around FET
Enxu Liu,
Chaoran Yang,
Junjie Li
et al.
Abstract:The lateral gate-all-around (GAA) field effect transistor is considered to be the most promising candidate for the next generation of logic devices at the 3nm technology node and beyond. SiGe plays an important role as a sacrificial layer in the GAA device, which requires isotropic etching, and the quality of the etching has a critical impact on the device performance. However, there is no definite scheme in the industry for the choice of etching method. In this paper, we choose two etching methods-ICP(Inducti… Show more
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