Study of SEL and SEU in SRAM using different laser techniques

Savchenkov, D. V.; Chumakov, A. I.; Petrov, Andrey G.; Pechenkin, Alexander; Егоров, А. С.; Mavritskiy, Oleg B.; Yanenko, Andrey V.

doi:10.1109/radecs.2013.6937411

Cited by 16 publications

(6 citation statements)

References 4 publications

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“…While executing SEE tests of semiconductor electronic devices with pico-and femtosecond laser facilities for both front-side and backside geometries we use two main laser irradiation techniques: focused [1][2][3] and local, [4][5][6][7][8][9]. There is also third approach based on two-photon absorption (TPA) [10], however, due to the complexity of LET estimation, TPA technique is being primarily used for scientific research but not for qualification tests.…”

Section: Experimental Techniquementioning

confidence: 99%

“…The alternative way to investigate SEEs is to utilize ultra-short pulses of light from pico-or femtosecond laser beam, focused onto the active IC layer [1][2][3][4][5][6][7][8][9], to initialize effects similar to that, induced by heavy particle transition. In principle we can choose appropriate laser wavelength for any semiconductor material, for example, Si or GaN.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The Laser-only Single-event Effects Test Method for Spacecraft Electronics Based on Ultrashort-pulsed-laser Local Irradiation

Mavritskii¹,

Chumakov²,

Егоров³

et al. 2018

KEn

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Section: Experimental Techniquementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The Laser-only Single-event Effects Test Method for Spacecraft Electronics Based on Ultrashort-pulsed-laser Local Irradiation

Mavritskii¹,

Chumakov²,

Егоров³

et al. 2018

KEn

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“…The simulation methods based on the application of the focused laser radiation of picosecond duration [21][22][23] are used in the experimental research and simulation of the impacts of single nuclear particles on sub-100-nm elements. The experimental research of the RAM units composed of the system together with one chip on a bulk 65-nm CMOS technology was carried out using a PICO-3 laser simulation system by the local laser impact technique [22]; part of the results are presented in [23].…”

Section: A Experimental Research Techniquementioning

confidence: 99%

“…The experimental research of the RAM units composed of the system together with one chip on a bulk 65-nm CMOS technology was carried out using a PICO-3 laser simulation system by the local laser impact technique [22]; part of the results are presented in [23]. Table 7 shows the main parameters of the laser scanning system.…”

Section: A Experimental Research Techniquementioning

confidence: 99%

Upset-resilient RAM on STG DICE memory elements with the spaced transistors into two groups

2016

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Abstract⎯The first experimental test of new DICE memory cells with the transistors spaced into two groups (Spaced Transistor Groups DICE-STG DICE), composed on a 65-nm CMOS static RAM proved their high upset resilience. The STG DICE memory cells have two communication wires between the two groups of transistors that made it possible to use the striping of groups of transistors to increase the distances between sensitive nodes of cells up to 2.32-3.09 μm at a small increase in cell area. The blocks of 65-nm 128 × 32-bit CMOS RAM cache and 32 × 64-bit multiport RAM based on the STG DICE cells are characterized by upset thresholds lying in the range of 3.55-4.05 nJ of the laser pulse energy with a pulse duration of 70 ps and diameter of the spot of 3.5 μm. These threshold values exceed the upset thresholds of 65-nm CMOS RAM on 6T memory cells by factors of 20 for RAM cache and 3.5 for multiport RAM. In STG DICE RAM multiple upsets are absent in contrast to RAM based on 6T-cells.

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“…To the moment of writing this paper, more than 100 different types of Russian and other ICs were tested 15,16 for various SEEs, such as SEU, SEL, SET etc.…”

Section: Pico-3 and Pico-4 Laser Testing Systems Applicationmentioning

confidence: 99%

Ultrashort pulsed laser tools for testing of semiconductor elements hardness to single event effects, caused by cosmic heavy charged particles

et al. 2015

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The installations for laser testing of microelectronic elements (first of all -integrated circuits) of devices for space applications for hardness to local radiation effects from heavy charged particles are presented. The possibility of a focused pulsed laser radiation application to the study of local radiation effects, caused by single heavy charged particles, is explained. The fundamentals of an approach to the construction of test sets, based on the picosecond and femtosecond lasers and systems for focusing their radiation, are considered. The main technical requirements for the basic modules of sets for laser testing (laser wavelength and pulse duration and repetition rate, spatial beam parameters and minimal spot size, speed of object movement and so on) are substantiated. All worked out sets have a full-featured software for the operational management of all modules of the laser test facility, including the positioning of the object, to provide feedback from the measurement results of the reaction of the object on the laser excitation. The parameters of developed laser hardware and software systems and their foreign counterparts are compared. Further improvement directions for laser testing tools are briefly outlined. The discussion is also presented of described hardware technical and operational characteristics, allowing to use it for a variety of scientific research studies, requiring selective (with submicron spatial resolution) object excitation by ultrashort laser pulses and recording responses to this effect with the exact timing of the moment of excitation, as well as to perform a variety of high precision technological operations.

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Study of SEL and SEU in SRAM using different laser techniques

Cited by 16 publications

References 4 publications

The Laser-only Single-event Effects Test Method for Spacecraft Electronics Based on Ultrashort-pulsed-laser Local Irradiation

The Laser-only Single-event Effects Test Method for Spacecraft Electronics Based on Ultrashort-pulsed-laser Local Irradiation

Upset-resilient RAM on STG DICE memory elements with the spaced transistors into two groups

Ultrashort pulsed laser tools for testing of semiconductor elements hardness to single event effects, caused by cosmic heavy charged particles

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