Study of resist outgassing by F 2 laser irradiation

Itakura, Yasuo; Kawasa, Youichi; Sumitani, Akira; Ishikawa, Seiichi; Irie, Shigeo; Itani, Toshiro

doi:10.1117/12.485087

Cited by 3 publications

(1 citation statement)

References 10 publications

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“…The F 2 laser of the current evaluation system is identical with the laser used in the former systems 8 . But for simplicity we briefly repeat the lasers main characteristics here.…”

Section: F 2 Lasermentioning

confidence: 99%

Evaluation systems of F 2 laser lithography materials

et al. 2004

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In this paper, we present an evaluation system for F 2 laser lithography masks and resists and we report preliminary test results. The evaluation system has two subsystems that are based on very accurate measurement technology. One subsystem is used for mask evaluation, the other subsystem for resist evaluation. The mask subsystem consists of two units. One unit evaluates real size 6025 binary masks placed horizontally as inside steppers. This unit measures three parameters: 1) the real time in-situ transmittance at 157nm during F 2 laser irradiation, 2) the in-situ VUV transmittance using a VUV spectrophotometer and 3) the deformation of the pellicle. The precision of transmittance measurement at 157nm is +/-0.5%. The precision of the pellicle deformation measurement is +/-0.1μ m. The second unit of the mask subsystem collects samples of the mask outgassing and analyzes them in a gas chromatograph mass spectrometer. The resist evaluation subsystem consists of three units. 1) One unit determines negative effects of outgassing resist contaminants on the transmittance of optical materials under F 2 laser irradiation, 2) the second unit analyzes the outgassing from resists and 3) the third unit examines the effectiveness of exposure tool purge nozzles to reduce outgassing contamination.

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“…The F 2 laser of the current evaluation system is identical with the laser used in the former systems 8 . But for simplicity we briefly repeat the lasers main characteristics here.…”

Section: F 2 Lasermentioning

confidence: 99%

Evaluation systems of F 2 laser lithography materials

et al. 2004

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Evaluation of outgassing from a fluorinated resist for 157nm lithography

Irie¹,

Hagiwara²,

Fujii³

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We have evaluated the outgassing products and the in situ transmittance of a contaminated CaF 2 substrate for monocyclic fluoropolymers with four protecting groups: methoxymethyl (MOM), tert-butoxycarbonyl (t-BOC), menthoxymethyl, and 2-cyclohexylcyclohexyloxymethyl. We found little correlation between the total amount of outgassing from the polymer and the decreasing rate of the CaF 2 substrate transmittance caused by outgassing adhesion. Although the MOM protecting group generated the largest amount of outgassing products, the most substantial decrease in the transmittance was observed for the t-BOC protecting group. Therefore, the absorption coefficient of the outgassing-contaminated CaF 2 substrate appears to be more sensitive to the type of protecting group, especially the t-BOC protecting group including a t-butyl unit. We conclude that in terms of material design of the fluoropolymer resist for 157 nm lithography, we need to pay attention to the protecting group of polymers, especially the protecting group including a t-butyl unit, which generates isobutene product during 157 nm irradiation.

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